MUN5216DW1T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363
Base Part Number:	MUN52**DW1T

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MUN5216DW1T1G, a type of Pre-Biased Transistors - Bipolar (BJT)- Arrays, is developed by Fairchild Semiconductor company. Its features include: low current consumption, high receiver sensitivity, low propagation delay, low stand-by current, flat frequency response, and high reliability. The MUN5216DW1T1G is an integrated pre-biased transistor array with an operational amplifier (OA) and two NPN transistors. It is mainly used in high temperature applications, such as automotive and industrial control systems. It is also used in telecommunication and consumer electronics applications. The MUN5216DW1T1G is especially suitable for wideband applications since its transconductance is higher than that of conventional transistors. The transconductance is the rate of change in the collector current with respect to the base-emitter voltage. It is important in determining the frequency response of devices.The MUN5216DW1T1G consists of two NPN transistors arranged in a Darlington configuration, with a Darlington collector-base junction and a common emitter. The transistors are connected to an OA and can be biased from the supply voltage either externally or internally, allowing the device to be tailored to a wide range of applications.The OA and transistors can operate in a variety of ways, depending on the application. For example, the OA can be used to amplify the signal, while the transistors are used in Class C or Class B configurations to provide linear or nonlinear gain. Additionally, the device can be used in current-sensing or transimpedance applications.The OA and reactors can be used together to control signal bandwidth, which is key in high frequency applications. The two transistors can also be used to control the feedback loop in the OA, thus providing linear gain over a wide frequency range.The MUN5216DW1T1G is a versatile device that can be used in a number of applications. It is an ideal solution for applications that require high receiver sensitivity, low current consumption, low propagation delay, low stand-by current, and flat frequency response. It offers designers a high degree of flexibility and reliability, making it suitable for a variety of application areas.

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