MUN5214T1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MUN5214T1 is a single, pre-biased, bipolar junction transistor (BJT) that extends power and size for mid-power applications. With a rated maximum power dissipation of 1 watt, it is designed for applications such as motor control, linear amplification and power switching.

The operating temperature range for MUN5214T1 is from -55°C to +150°C, making it suitable for use in extreme temperatures as well. Furthermore, due to its ability to withstand voltage transients up to 50V, it is suitable for applications requiring high voltage protection.

The MUN5214T1\'s NPN transistors are commonly constructed with a three-layer silicon sandwich of emitter, base, and collector that is interconnected by individual base and emitter terminals. These transistors can have differing characteristics such as their power ratings, operating temperature range and voltage transients they can handle. The transistor is then biased so that it can easily switch from an "on" to "off" mode.

The device employs an under-voltage lockout feature to ensure that a loss of supply voltages does not cause an uncontrolled transition from the "on" to "off" state. The under-voltage lockout feature prevents the transistor from turning on whenever the supply voltage is lower than the low threshold voltage. This ensures that high-voltage fields do not inadvertently activate the device when the supply voltage is below the expected level.

The MUN5214T1 is highly suitable for applications that require high-speed switching and reliable operation in harsh environments. The unique construction of the device also allows for higher gain and better thermal conductivity than typical NPN transistors. The device also has a negative temperature coefficient which reduces the gain when the temperature is raised. This ensures that the device remains stable under varying temperatures.

In summary, the MUN5214T1 is a single, pre-biased transistor that is designed to provide efficient and reliable operation in a wide range of applications. It is suitable for use in extreme temperatures, has a high tolerance of voltage transients and includes an under-voltage lockout feature to prevent unintentional transitions. It is well suited for mid-power applications such as motor control, linear amplification and power switching.

The specific data is subject to PDF, and the above content is for reference