MUN5335DW1T1G Discrete Semiconductor Products |
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Allicdata Part #: | MUN5335DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5335DW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | MUN5335DW1T1G Datasheet/PDF |
Quantity: | 51000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | MUN53**DW1 |
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MUN5335DW1T1G is a chip-basic pre-biased PNP transistor array with low saturation voltage, low noise, and low power consumption, designed for automotive and consumer applications. It provides excellent sound-off/turn-on performance. MUN5335DW1T1G is developed to be used in high-voltage, high-current conditions without increasing the bias voltage or current and without generating excessive heat. This is an ideal device for audio and switching applications.
A PNP transistor is a semiconductor device consisting of three terminals, base, emitter and collector, in which the current flow is controlled by the voltage applied to the base terminal. The base current, typically a few times smaller than the emitter or collector current, is used to control the current flow in the transistor. When the base is made negative with respect to the emitter, the transistor is turned on, and current flows from the emitter to the collector. The current gain is usually indicated by the fraction of the current flowing from the collector divided by the current flowing from the base, known as hFE.
The working principle of MUN5335DW1T1G is based on this transistor technology. It consists of eight transistors, each with a pre-bias resistor connected to the base of each transistor. This allows the transistors to turn on and off without the need to apply additional bias voltage or current to the base. The pre-bias resistors also act as a noise suppressor, reducing the noise generated by the transistor array. Additionally, the pre-bias resistors reduce power consumption of the array, making it suitable for battery operated applications. The voltage drop at the transistors is also lower than that at a normal PNP transistor array and therefore generates less heat.
MUN5335DW1T1G is used in various automotive and consumer applications. It is suitable for audio applications such as high power amplifiers, loudspeakers and subwoofers. It is an ideal device for switching applications such as car alarms, door locks and ignition switches. It is also well suited for power converters, power supplies, voltage converters and voltage regulators. Furthermore, it can be used for light dimming applications, motor speed control and motor control circuits.
In conclusion, MUN5335DW1T1G is a pre-biased PNP transistor array that provides excellent sound-off/turn-on performance, low saturation voltage, low noise, and low power consumption. It is an ideal device for automotive and consumer applications such as audio, switching, power converters, voltage converters and light dimming. This chip-basic pre-biased PNP transistor array is a cost-effective, reliable and highly efficient device.
The specific data is subject to PDF, and the above content is for reference
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