MUN5113DW1T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363
Base Part Number:	MUN51**DW1T

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The MUN5113DW1T1G is an integrated NPN pre-biased array that is part of a wide array of transistors from the bipolar (BJT) family. It offers a high degree of integration and performance in a variety of applications. The MUN5113DW1T1G package includes two NPN transistors and is ideally suited for small-signal applications.The main purpose of the MUN5113DW1T1G is to provide an easy-to-use solution for high-density miniature packages. The package is designed to reduce the complexity of mating and soldering processes. It offers an integrated solution with an optimized pin count and a low off-state leakage current, while being tolerant to damage from static electricity. It also simplifies the process of routing the signal lines and mounting the transistors.The MUN5113DW1T1G is a pre-biased array with high performance and low power consumption. It uses a dual-emitter configuration to provide increased power-handling capabilities and is capable of driving loads of up to 1A. The device is also capable of operating at a wide range of temperatures and can be used in various temperature ranges. Its integrated circuit design and robust isolated construction ensure the device is reliable in low-power applications.The MUN5113DW1T1G offers two primary applications; it can be used as a low-cost linear amplifier or as an audio power amplifier. It can also be used for small signal linearisation and for low-voltage control circuits.The MUN5113DW1T1G can be used in a variety of applications because it has a wide range of features, including improved linearity, low output capacitance, and low-power operation. The device can also be used in high-speed switching applications such as frequency synthesizers and clocks.The MUN5113DW1T1G offers a number of significant benefits, such as low quiescent power dissipation, low input offset voltage, and low output noise level. It also has a low output resistance. The working principle of the MUN5113DW1T1G is based on the same of an NPN transistor. This means that the device functions by having two N-type bases and one P-type source. The base-emitter junction is forward-biased when the base voltage is increased and the base-collector junction is reversed-biased when the base voltage is lowered. When current flow into the base of the device, it creates a current gain which in turn amplifies the input signal. The gain increases as the base voltage is increased and the signal is amplified and delivered to the output. The MUN5113DW1T1G is a highly integrated NPN pre-biased array device that is designed to offer excellent performance while consuming minimal power. The device can be used in a wide range of applications including linear and audio amplification, low-voltage control circuits, and high-speed switching. The device offers improved linearity, along with low input offset voltage and low output noise level, making it an ideal choice for applications such as frequency synthesizers, clocks, and high-frequency switching.

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