Allicdata Part #: | MUN5114T1OSCT-ND |
Manufacturer Part#: |
MUN5114T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN5114T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN51**T |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MUN5114T1 is a type of single, pre-biased bipolar junction transistor (BJT). This BJT has wide range of application fields, from consumer electronics to high-end industrial power usage. The MUN5114T1 is designed to provide a high level of performance in both linear and switching applications. It is also designed to provide reliable operation in harsh conditions such as extreme temperatures, radiation, and electrostatic discharge.
The device structure of MUN5114T1 is a monolithic NPN BJT, pre-biased between the emitter and collector terminals. This pre-bias gives the device an enhanced frequency response and output voltage range. The internal structure of MUN5114T1 is designed to ensure that the base current is kept low, which helps to reduce reverse leakage current. This feature makes MUN5114T1 an ideal choice for many applications.
The working principle of MUN5114T1 is based on the same principle as any other BJT. When a current flows through the collector-emitter terminals, it causes a voltage to be developed across the base-emitter junction. This voltage causes a current to flow through the base-collector terminals, which then drives the current across the collector-emitter terminals. This current is then amplified to provide the desired output. The pre-bias on the base-emitter junction gives the device a higher frequency response than a regular BJT, allowing for improved performance.
The MUN5114T1 has a wide range of applications. It is used in switching and linear amplification applications, as well as in power management applications. It is also used in applications such as controlling motors, regulating temperature and pressure, and controlling lighting. The device is also used in applications requiring high-frequency operation, such as in radio frequency communications.
The MUN5114T1 is an ideal choice for many applications due to its high frequency response, high current amplification, and low reverse leakage current. It is also reliable in extreme conditions, and offers a wide range of applications. This makes it a great choice for both consumer electronics and industrial power applications.
The specific data is subject to PDF, and the above content is for reference
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