Allicdata Part #: | MUN5131T1G-ND |
Manufacturer Part#: |
MUN5131T1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN5131T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01630 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN51**T |
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The MUN5131T1G device belongs to a range of transistors called General-Purpose Bipolar Junction Transistors (BJTs). It is a single, pre-biased transistor that is widely used in a range of applications.
A BJT is a type of active electronic device that uses electrical current to control a larger electrical current. BJTs are commonly used in many analog circuits, such as amplifiers, oscillators and switches. They have three terminals – the emitter, the base and the collector – and can be either NPN (negative-positive-negative) or PNP (positive-negative-positive)depending on their design.
The MUN5131T1G is an NPN transistor. The collector is connected to the positive power rail, the emitter is connected to the negative power rail, and the base is connected to ground. This arrangement is known as a “common emitter” configuration. The MUN5131T1G has a wide operating voltage range of 5 V to 40 V with a maximum peak current of 200 mA.
The MUN5131T1G is most commonly used as an amplifier and switch. When used as an amplifier, it takes an input signal and increases its current so that it can be used to drive other components in a circuit. When used as a switch, it is used to control the electrical flow in a circuit, allowing it to be turned on and off with a signal.
The MUN5131T1G’s construction consists of an N-channel epitaxial silicon substrate. This transistor has a typical gain of 100 and an input capacitance of 4 pF. It also has a reverse leakage current of less than 0.1 uA, which makes it suitable for use in low-noise amplifier applications where a low reverse current is required.
In addition to its amplifier and switch applications, the MUN5131T1G can also be used as a driver for TTL logic. This makes it a versatile device that can be used in a variety of different applications. It is also well suited for use in low-noise analog circuits, as its low reverse leakage current reduces the amount of electrical noise that can interfere with the signal being amplified.
The MUN5131T1G is a very useful device that can be used in a variety of analog and digital circuit applications. It is a pre-biased transistor that offers a wide operating voltage range and can be used as either an amplifier or switch. In addition, it has a low reverse leakage current that makes it ideal for use in low-noise amplifier applications. With its versatile design and wide range of applications, the MUN5131T1G is sure to be an essential component in any electronics engineer’s toolbox.
The specific data is subject to PDF, and the above content is for reference
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