MUN5233T1G Allicdata Electronics

MUN5233T1G Discrete Semiconductor Products

Allicdata Part #:

MUN5233T1GOSTR-ND

Manufacturer Part#:

MUN5233T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 202MW SC70-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MUN5233T1G datasheetMUN5233T1G Datasheet/PDF
Quantity: 15000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 15000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MUN52**T
Description

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MUN5233T1G is a single-bipolar junction transistor (BJT) that is pre-biased. As one of the most commonly used electronic components, BJTs are used to control the current flow in a circuit and involve two main junctions of an N-type semiconductor and a P-type semiconductor. A single-bipolar junction transistor is composed of three parts: a collector, an emitter and a base which is used to control the voltage and current of the circuit.

The pre-biased MUN5233T1G goes one step further to make this type of transistor easier to use as it is already biased while still maintaining the same properties as a general BJT. In order to pre-bias the transistor, a resistor is connected between the collector and the base of the MUN5233T1G. This pre-biased component can be used in applications where the voltage across the collector and the base is not known. It also allows for more precise control of the current flow in the circuit than an ordinary BJT.

MUN5233T1G transistors are typically used in small switching circuits, audio or RF amplifiers, and other low-power applications due to their low power consumption and switching speed. Additionally, they can be used in oscillator, voltage regulator, and current regulator circuits. Since they are pre-biased, they can be used to control the flow of current in a circuit without the need for precise voltage and current values. They are also a good component to consider when creating small and cost-effective circuitry.

The principles behind the operation of a MUN5233T1G can be broken down into a few steps. First, an input signal is applied to the base of the MUN5233T1G and it causes the current to flow between the emitter and the collector. This current is proportional to the input signal and creates a voltage drop across the resistor, which is the pre-bias voltage. Then, this voltage is used to control the current flowing through the transistor. This current flow is then amplified and used to drive other components or circuits.

The MUN5233T1G is an excellent choice as a single pre-biased BJT. It is easy to use and offers a cost-effective solution for low-power applications. Its pre-bias feature makes it useful for applications where the voltage and current level are not known and it can be used to drive and control other components or circuits in a circuit. Additionally, its low power consumption and switching speed make it an ideal component for various audio and RF amplifiers.

The specific data is subject to PDF, and the above content is for reference

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