MUN5135DW1T1G

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The MUN5135DW1T1G is a Multi-Mode Micro SMD Field Effect Transistor (FET) Array from NXP Semiconductors. This device is designed for high-frequency applications, such as high-speed telecommunications applications and for other use in mixed signal and RF applications. The MUN5135DW1T1G consists of eight PMOS array transistors, and all of the transistors are designed for pre-biased, low-voltage operation. The device is housed in an MSOP-8 package, and offers an industry-leading feature set for a variety of signal conditioning, RF and power applications.

The MUN5135DW1T1G is a pre-biased, low-voltage depletion mode FET array that is capable of operating at very low voltages (down to 0.7V) and high frequencies (up to 900MHz). The device is constructed of two matched FETs, each with two Source, two Gate and two Drain connections. The MUN5135DW1T1G is designed for RF and power applications, and the two FETs can be used either in series or parallel. It is available in the MSOP-8 package, and the source and gate connections are available on the same side of the package for easier board routing.

The MUN5135DW1T1G has several features that make it suitable for a wide range of applications. The device is rated for low-voltage operation, and the Source-to-Drain breakdown voltage is rated at -40V. The on-resistance (Rdson) is typically 15Ω over a range of 1V-13V gate voltage, and the maximum Rdson for the part is typically 25Ω. The device has a low power dissipation of only 17mW, making it well suited for portable and battery powered applications. Additionally, the part is ESD protected, with an ESD rating of 2kV (Human Body Model).

The MUN5135DW1T1G is well suited for a variety of applications. It can be used for high-frequency switching applications, such as in high-speed telecommunication applications. It can also be used in power supply design and as low-side switches for low-voltage DC motor control. Additionally, it can be used in various computing applications, such as power management control, power delivery, and protection circuits. The device is also used in RF applications such as wireless charging, Bluetooth, Wi-Fi, and Zigbee.

The working principle of the MUN5135DW1T1G is based on the E-mode or enhancement-mode Field Effect Transistor (FET). The two transistors in the device are configured in parallel and act as a single unit. The transistors are normally turned off, and require an input voltage to turn them on. When an external voltage is applied to the gate of the FET array, a channel is formed between the source and the drain, allowing current to flow through the channel. This current flow can then be used to control the various circuit functions.

The MUN5135DW1T1G is a pre-biased, low-voltage FET array, designed for high-frequency applications, such as high-speed telecommunications, and for other use in mixed signal and RF applications. The device is housed in an MSOP-8 package, and features an industry-leading feature set for a variety of signal conditioning and RF applications. The device is rated for operation up to 900MHz, and is capable of operating at very low voltages (down to 0.7V). With its low power dissipation and ESD protection, the MUN5135DW1T1G is an ideal solution for a variety of RF and power applications.

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