MUN5235T1G Allicdata Electronics

MUN5235T1G Discrete Semiconductor Products

Allicdata Part #:

MUN5235T1GOSTR-ND

Manufacturer Part#:

MUN5235T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 202MW SC70-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MUN5235T1G datasheetMUN5235T1G Datasheet/PDF
Quantity: 21000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 21000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MUN52**T
Description

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MUN5235T1G Application Field & Working Principle

The MUN5235T1G is a single, pre-biased transistor that can be used for various applications. It is the extended version from its series, the MUN family, which adds additional pre-biased options to fit various needs. This transistor is extensively used for computing, automotive, aviation, and industrial applications.

The MUN5235T1G is a bipolar (bipolar junction transistor, or BJT) transistor that is made up of three main components: the collector, base, and emitter. These components have a number of electrical connections between them that allow the transistor to operate in different states. It is important that these connections are made in the correct order so that the transistor is able to operate at its optimal settings.

The most common possible circuit configuration for the MUN5235T1G is pre-biased, meaning that the base is connected to a voltage source (VBE) that provides an offset voltage to the base-emitter junction. This bias voltage provides the current necessary for the transistor to be consistently “on” in a given circuit. With this configuration, the MUN5235T1G exhibits a fast switching time and low turn-off time.

When the MUN5235T1G is off, the current flow is blocked between the collector and the emitter; however, when the transistor is “on”, current can freely flow between the collector and emitter. The amount of current that flows is determined by the voltage applied to the base and the gain of the transistor. The gain is determined by the ratio of the current flowing through the collector compared to the current flowing through the base (known as the β).

The MUN5235T1G is a high-speed transistor; it offers a switching time of 0.4 – 0.7 nanoseconds, which is great for high-frequency applications. Furthermore, it also offers a high current-carrying capacity with a peak value of 6A, making it suitable for use in larger circuits. It is also able to effectively reduce switching power losses, meaning that it has a low power consumption and low heat emissions.

Overall, the MUN5235T1G is an excellent pre-biased transistor for various applications and is a popular choice for many engineers. Its versatility allows it to be used in a variety of situations, giving it a wide range of potential applications.

The specific data is subject to PDF, and the above content is for reference

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