MUN5136T1G

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Introduction

MUN5136T1G is a pre-biased single bipolar junction transistor (BJT) device. It is a two-terminal device that combines both a bipolar NPN transistor and an N-channel enhancement-mode MOSFET, each of which is fabricated in a single monolithic chip. It is a one-of-a-kind device that offers several advantages over standard BJT devices. Its low noise, tight latching, low gate-source capacitance, reduced voltage drop, and smaller package make it a practical solution for many applications.

Application Field

The MUN5136T1G provides many advantages over other standard BJT devices, and is suitable for a wide range of applications such as switch mode power conversion, consumer audio and video applications, solid-state lighting, DC-DC converters, automotive systems, instrumentation and communication systems, and high efficiency power amplifiers. The device is particularly useful when a low gate-source capacitance and low voltage drop are desired. It is also applicable in high speed switching applications, where its low noise and fast turn-on operation make it an ideal choice.

Working Principle

The MUN5136T1G is a pre-biased device, which means that it requires an external bias circuit for proper operation. The device has a P-channel MOSFET and a NPN transistor built into a single package, with the source of the P-Channel MOSFET connected to the collector of the NPN BJT. This combination provides the best of both devices, allowing the device to be driven with both bipolar current sources and low voltage logic. The device is controlled by an activation gate voltage that is applied to the gate of the MOSFET. When a sufficient voltage is applied, the current is allowed to flow from the source to the drain of the MOSFET, which in turn turns on the NPN BJT. The BJT operates as an emitter-follower stage, providing amplification and also acts as a current source, providing the collector current. The MOSFET also acts as a current source and provides current to the BJT. The two currents combine to provide the total output current.

Conclusion

The MUN5136T1G is a pre-biased single bipolar junction transistor (BJT) device with many advantages over standard BJT devices. It is suitable for a wide range of applications, including switch mode power conversion, consumer audio and video applications, and high efficiency power amplifiers. The device is driven by a low voltage gate voltage and is controlled by a combination of both a P-Channel MOSFET and a NPN BJT to provide the best of both worlds. The device is a practical solution for many applications, offering a low noise, tight latching, low gate-source capacitance, reduced voltage drop, and a small package.

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