Allicdata Part #: | MUN5141T1G-ND |
Manufacturer Part#: |
MUN5141T1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 202MW |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN5141T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01442 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MUN5141T1G is a single pre-biased bipolar junction transistor, a type of transistor that absorbs an input signal and amplifies, inverts, or switches that signal. The MUN5141T1G is a low-power device with a 375mW rating, and is ideal for use in consumer electronics, such as splitters, mixers, switching power supplies, and audio amplifiers. It’s also used in circuit applications that need reliable and robust performance, including battery-operated devices and automotive circuits.
A bipolar junction transistor consists of three semiconductor layers, the emitter, base, and collector. The device is connected in the surface using a wire having a coating of N-type material and the emitter connected to the positive supply. When a bias current flows through the transistor, holes that are drawn from the base to the collector and electrons from the collector to the emitter, thus creating a current amplification.
The MUN5141T1G offers excellent noise characteristics, low operating current and tight voltage regulation. It also provides a higher breakdown voltage, allowing for a higher output current and is designed for applications with a maximum stress level of 10V. This makes the device suitable for use in a wide range of battery-operated products, such as audio amplifiers, cellular phones, and portable computers.
The MUN5141T1G also offers excellent reliability, with a guaranteed shelf life of three years without leakage. Additionally, it offers minimum leakage current, high common mode rejection ratio, and low gate-source capacitance. These factors reduce the potential for EMI radiation and provide improved system performance.
The MUN5141T1G has a wide variety of applications, such as amplifiers and voltage regulators in consumer electronics, mixers, switching power supplies, and audio amplifiers. It is also used in automotive circuits and is suitable for use in applications that require vibration resistance, such as portable equipment.
The MUN5141T1G is a simple and reliable transistor with a wide range of applications. It provides excellent noise characteristics, low operating current, and tight voltage regulation. In addition, it offers high breakdown voltage, high common mode rejection ratio, and low gate-source capacitance, which make it a suitable choice for automotive and portable equipment. With its pre-biased configuration, the MUN5141T1G is an ideal transistor for battery-operated devices, audio amplifiers, cellular phones, and other consumer applications.
The specific data is subject to PDF, and the above content is for reference
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