Allicdata Part #: | MUN5133T1GOSTR-ND |
Manufacturer Part#: |
MUN5133T1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN5133T1G Datasheet/PDF |
Quantity: | 30000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.01788 |
6000 +: | $ 0.01613 |
15000 +: | $ 0.01402 |
30000 +: | $ 0.01262 |
75000 +: | $ 0.01122 |
150000 +: | $ 0.00935 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN51**T |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are well known among engineers and technicians for their many practical applications. Transistors are semiconductor devices that are used to control the flow of electricity through a circuit. Bipolar transistors are one of the main types of transistors, and the MUN5133T1G is a single, pre-biased bipolar transistor.
The MUN5133T1G is a small surface mount package and features an extended current gain range and low double pulse stability. The maximum collector-to-emitter voltage rating (V ce) is 30V, making it suitable for a number of applications. It also has a low base drive requirement of 200uA, which further adds to its versatility. The package includes an integrated series base resistor, significantly reducing circuit complexity. In addition, the low leakage current, high current gain and fast switching offer further benefits in various applications.
The working principle of the MUN5133T1G is relatively simple; it is a three-terminal device, which means that it has a collector, an emitter and a base. The collector is the current flowing out of the transistor, the emitter is the current coming out of the transistor, and the base is what controls the current flowing through the transistor. When a small current is applied to the base terminal, a larger current is allowed to flow between the collector and emitter terminals, essentially amplifying the signal applied to the base. The amount of current amplified is determined mainly by the current gain, also known as the hFE, of the transistor.
The MUN5133T1G can be used in a variety of applications due to its small size, low drive requirement, and extended current gain range. Its fast switching and low leakage current can be beneficial in switching circuits, and its integrated series base resistor allows for more efficient use of space and reduced circuit complexity in many different applications. It is often used in the switching circuits of televisions and computer monitors, as well as in the power amplifiers of audio electronics.
The MUN5133T1G is a single, pre-biased bipolar transistor, offering a range of benefits in a range of different applications. Its 30V collector-to-emitter voltage rating, low base drive requirement and integrated series base resistor make it suitable for a number of circuits in a variety of applications. The working principle of the transistor is relatively simple, allowing it to be used as an amplifier or switch, depending on the application.
The specific data is subject to PDF, and the above content is for reference
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