Allicdata Part #: | MUN5237T1GOS-ND |
Manufacturer Part#: |
MUN5237T1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN5237T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01543 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN52**T |
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The MUN5237T1G is a single, pre-biased bipolar junction transistor (BJT). It is a bipolar transistor that has been pre-biased, meaning it has a base-emitter voltage applied at the factory and the device is ready for use without additional bias components. It is designed for use in a wide variety of polarizing applications. Applications where the MUN5237T1G can be used include general purpose switching, small signal and large signal amplification, and low noise amplification. It can also be used for switching in automotive and other applications.
The MUN5237T1G is a NPN bipolar transistor that has a collector-emitter voltage (Vce) of -30V and a collector current rating of 100mA. It is offered in TO-92 package and has good current transfer ratio, high breakdown voltage, and low capacitance. The device has a low saturation voltage and is capable of high speed switching. The transistor has a high gain that makes it well-suited for use in low noise applications. Additionally, it is well-suited for use in a wide range of applications due to its high input impedance and low output impedance.
The working principle of the MUN5237T1G is based on the basic principles of a BJT. A BJT is essentially a three-layer semiconductor device composed of a base region, an emitter region, and a collector region. When a voltage is applied to one of these regions, it causes a current to flow between the other two. The current that flows between the base and emitter is called the base current, while the current that flows between the collector and emitter is called the collector current. The current gain, or the ratio of the collector current to the base current, is the most important parameter of a BJT.
When the voltage applied to the base increases, more base current flows and the collector current increases proportionately. The collector current will reach its maximum value when the base current is equal to the saturation current, which is the maximum collector current that a BJT can produce. As the base voltage increases, the collector current will remain constant until a certain point is reached, which is known as the cutoff voltage. When the voltage applied to the base is less than the cut off voltage, the collector current will be zero. The MUN5237T1G exhibits this behavior when a voltage is applied to the base.
The MUN5237T1G can be used in a variety of polarizing applications where fast switching and low noise is desired. It is often used in small signal and large signal amplification circuits. It is also commonly used in automotive applications, such as fuel injectors and ECU systems. Additionally, it can be used in switching applications, such as high-power switching applications and power management circuits. The MUN5237T1G is a versatile transistor that is well-suited for a number of different polarizing applications.
The specific data is subject to PDF, and the above content is for reference
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