MUN5237T1G Allicdata Electronics
Allicdata Part #:

MUN5237T1GOS-ND

Manufacturer Part#:

MUN5237T1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 202MW SC70-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MUN5237T1G datasheetMUN5237T1G Datasheet/PDF
Quantity: 1000
15000 +: $ 0.01543
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MUN52**T
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUN5237T1G is a single, pre-biased bipolar junction transistor (BJT). It is a bipolar transistor that has been pre-biased, meaning it has a base-emitter voltage applied at the factory and the device is ready for use without additional bias components. It is designed for use in a wide variety of polarizing applications. Applications where the MUN5237T1G can be used include general purpose switching, small signal and large signal amplification, and low noise amplification. It can also be used for switching in automotive and other applications.

The MUN5237T1G is a NPN bipolar transistor that has a collector-emitter voltage (Vce) of -30V and a collector current rating of 100mA. It is offered in TO-92 package and has good current transfer ratio, high breakdown voltage, and low capacitance. The device has a low saturation voltage and is capable of high speed switching. The transistor has a high gain that makes it well-suited for use in low noise applications. Additionally, it is well-suited for use in a wide range of applications due to its high input impedance and low output impedance.

The working principle of the MUN5237T1G is based on the basic principles of a BJT. A BJT is essentially a three-layer semiconductor device composed of a base region, an emitter region, and a collector region. When a voltage is applied to one of these regions, it causes a current to flow between the other two. The current that flows between the base and emitter is called the base current, while the current that flows between the collector and emitter is called the collector current. The current gain, or the ratio of the collector current to the base current, is the most important parameter of a BJT.

When the voltage applied to the base increases, more base current flows and the collector current increases proportionately. The collector current will reach its maximum value when the base current is equal to the saturation current, which is the maximum collector current that a BJT can produce. As the base voltage increases, the collector current will remain constant until a certain point is reached, which is known as the cutoff voltage. When the voltage applied to the base is less than the cut off voltage, the collector current will be zero. The MUN5237T1G exhibits this behavior when a voltage is applied to the base.

The MUN5237T1G can be used in a variety of polarizing applications where fast switching and low noise is desired. It is often used in small signal and large signal amplification circuits. It is also commonly used in automotive applications, such as fuel injectors and ECU systems. Additionally, it can be used in switching applications, such as high-power switching applications and power management circuits. The MUN5237T1G is a versatile transistor that is well-suited for a number of different polarizing applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MUN5" Included word is 40
Part Number Manufacturer Price Quantity Description
MUN5214T1G ON Semicondu... -- 51000 TRANS PREBIAS NPN 202MW S...
MUN5235T1G ON Semicondu... -- 21000 TRANS PREBIAS NPN 202MW S...
MUN5211T1G ON Semicondu... 0.02 $ 18000 TRANS PREBIAS NPN 310MW S...
MUN5213T1G ON Semicondu... -- 39000 TRANS PREBIAS NPN 202MW S...
MUN5233T1G ON Semicondu... -- 15000 TRANS PREBIAS NPN 202MW S...
MUN5133T1G ON Semicondu... 0.02 $ 30000 TRANS PREBIAS PNP 202MW S...
MUN5215T1G ON Semicondu... -- 1000 TRANS PREBIAS NPN 202MW S...
MUN5136T1G ON Semicondu... 0.01 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5138T1G ON Semicondu... 0.01 $ 1000 TRANS PREBIAS PNP 202MWPr...
MUN5140T1G ON Semicondu... 0.01 $ 1000 TRANS PREBIAS PNP 202MWPr...
MUN5141T1G ON Semicondu... 0.01 $ 1000 TRANS PREBIAS PNP 202MWPr...
MUN5238T1G ON Semicondu... 0.01 $ 1000 TRANS BRT NPN 50V 100MA S...
MUN5240T1G ON Semicondu... 0.01 $ 1000 TRANS BRT NPN 50V 100MA S...
MUN5241T1G ON Semicondu... 0.01 $ 1000 TRANS BRT NPN 50V 100MA S...
MUN5113T3G ON Semicondu... 0.01 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5316DW1T1G ON Semicondu... 0.04 $ 9000 TRANS PREBIAS NPN/PNP SOT...
MUN5237T1G ON Semicondu... 0.01 $ 1000 TRANS PREBIAS NPN 202MW S...
MUN5137T1G ON Semicondu... 0.02 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5115T1G ON Semicondu... 0.02 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5116T1G ON Semicondu... 0.02 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5234T1G ON Semicondu... 0.02 $ 1000 TRANS PREBIAS NPN 202MW S...
MUN5131T1G ON Semicondu... 0.02 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5113DW1T1G ON Semicondu... 0.04 $ 1000 TRANS 2PNP PREBIAS 0.25W ...
MUN5312DW1T1G ON Semicondu... -- 1000 TRANS PREBIAS NPN/PNP SOT...
MUN5114DW1T1G ON Semicondu... 0.04 $ 1000 TRANS 2PNP PREBIAS 0.25W ...
MUN5214DW1T1G ON Semicondu... 0.04 $ 1000 TRANS 2NPN PREBIAS 0.25W ...
MUN5111T1G ON Semicondu... 0.02 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5135T1G ON Semicondu... 0.02 $ 15000 TRANS PREBIAS PNP 202MW S...
MUN5216DW1T1G ON Semicondu... -- 84000 TRANS 2NPN PREBIAS 0.25W ...
MUN5335DW1T1G ON Semicondu... -- 51000 TRANS PREBIAS NPN/PNP SOT...
MUN5233DW1T1G ON Semicondu... 0.04 $ 3000 TRANS 2NPN PREBIAS 0.25W ...
MUN5232DW1T1G ON Semicondu... 0.03 $ 6000 TRANS 2NPN PREBIAS 0.25W ...
MUN5230DW1T1G ON Semicondu... 0.04 $ 27000 TRANS 2NPN PREBIAS 0.25W ...
MUN5135DW1T1G ON Semicondu... -- 18000 TRANS 2PNP PREBIAS 0.25W ...
MUN5333DW1T1G ON Semicondu... -- 1000 TRANS PREBIAS NPN/PNP SOT...
MUN5232T1G ON Semicondu... 0.02 $ 15000 TRANS PREBIAS NPN 202MW S...
MUN5114T1 ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 202MW S...
MUN5214T1 ON Semicondu... -- 1000 TRANS PREBIAS NPN 202MW S...
MUN5236T1 ON Semicondu... -- 1000 TRANS PREBIAS NPN 202MW S...
MUN5237T1 ON Semicondu... 0.0 $ 1000 TRANS PREBIAS NPN 202MW S...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics