Allicdata Part #: | MUN5214DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5214DW1T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | MUN5214DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02891 |
6000 +: | $ 0.02514 |
15000 +: | $ 0.02137 |
30000 +: | $ 0.02011 |
75000 +: | $ 0.01886 |
150000 +: | $ 0.01676 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | MUN52**DW1T |
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Transistors - Bipolar (BJT) - Arrays, Pre-Biased
The MUN5214DW1T1G is a 70V NPN dual pre-biased array consisting of two matched NPN transistors. It is designed to address the need in low voltage, low current inverter, booster and battery charger control applications. This device makes it possible to control loads that require more than one switching device, such as LED drivers and motor drivers. It also offers cost savings over buying multiple transistors, as well as greatly reducing board space.
Application Field
The MUN5214DW1T1G is a pre-biased array, enabling a designer to select the exact device needed to match their application requirements while eliminating redundancy. These transistors are ideal for a variety of applications, such as LED drivers, motor drivers, DC-DC converters, sensors, and low-power inverters. Additionally, for feedback control overload protection, thermal overload protection and 3.3V and 5.5V applications, this device is the perfect addition.
Working Principle
The MUN5214DW1T1G is designed to operate in either differential or single-ended mode. In single-ended mode, the collector of the first transistor is connected to the base of the second, and the collector of the second transistor is connected to the power supply. The voltage will be divided between the two transistors such that the first transistor will have a lower current and voltage drop than the second. In differential mode, both the collector of the first transistor and the base of the second transistor are connected to the power supply, which will result in an equal current and voltage drop between the two transistors.
Furthermore, the MUN5214DW1T1G offers current gains of up to 250, and low base drive currents of only 25μA, enabling low-voltage applications. Additionally, this device is packaged in a miniature 6-pin SOT-23, allowing it to be placed in tight spaces. It is also rated to 200mA continuous current with a maximum operating temperature of 125°C and a storage temperature of -55°C to 150°C.
The MUN5214DW1T1G is well suited for a wide range of applications, with its low voltage, low current, and small size. It offers designers a single, easy to use solution for applications that require multiple transistors, such as LED drivers and motor drivers. Additionally, its pre-biased feature makes selecting the correct device for a given application easy and cost effective.
The specific data is subject to PDF, and the above content is for reference
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