Allicdata Part #: | MUN5238T1G-ND |
Manufacturer Part#: |
MUN5238T1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS BRT NPN 50V 100MA SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN5238T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01442 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MUN5238T1G is a single, pre-biased bipolar junction transistor. Its main application field and working principle lie in its use for switching low-signal electronic signals, such as audio and video signals. Due to its combination of a collector and a base, the MUN5238T1G can be used for amplification, voltage conversion and signal transfer applications, such as those found in many consumer electronics.
The MUN5238T1G emulates a voltage-controlled flow between its base and collector terminals. When the voltage applied to its base is increased, the electric field generated between the collector and base causes current to flow from the collector to the base of the transistor, creating the desired electrical current. An increase in the voltage applied to the base functions as an amplifier, or signal accelerator, increasing the current generated.
The physical structure of the MUN5238T1G allows it to be used in an environment with high amounts of heat. Its construction eliminates a lot of the problems associated with signal distortion, which allows for a steady stream of power throughout the circuitry. Additionally, the use of the single, pre-biased transistor prevents the signal from being distorted due to the extra voltage needed for the collector and base.
The MUN5238T1G is characterized by its small size, high power capability, and extremely low capacitance. The small size factor allows for its widespread use in consumer electronics and other application areas, such as automotive and audio/video products. Its high power capability allows it to handle even the most sensitive signals without compromising the integrity of the signal while its low capacitance reduces the amount of additional circuitry needed.
The MUN5238T1G’s small size and low capacitance also give it an edge when responding to sudden changes in load. Its fast response time allows it to react quickly to changes in the load and minimize distortion in the signal. This makes it an invaluable tool for use in products that require fast response times, such as automotive, medical, or industrial applications.
By combining its features of small size, high power capability, and low capacitance the MUN5238T1G offers the ideal solution for low-signal electronic applications. Its application field and working principle makes it an invaluable component in consumer electronics and automotive parts design. Additionally, its fast response time is key for applications needing a fast response to changing loads.
The specific data is subject to PDF, and the above content is for reference
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