MUN5213T1G Discrete Semiconductor Products |
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Allicdata Part #: | MUN5213T1GOSTR-ND |
Manufacturer Part#: |
MUN5213T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN5213T1G Datasheet/PDF |
Quantity: | 39000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN52**T |
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The MUN5213T1G is a pre-biased, single bipolar junction transistor device designed for use in a range of different analytics, communication and consumer electronic applications. This device is capable of operating at frequencies up to 500 MHz, making it a valuable component for any high-frequency application.
The MUN5213T1G consists of three terminals – the collector, base, and emitter. It operates by transferring current from the collector to the emitter based on the current applied to the base terminal.
The MUN5213T1G can be classified as single, pre-biased, bipolar junction transistor. The pre biased condition is achieved using two resistors connected externally to the device, which set up the desired operating conditions. This type of transistor is an ideal choice for applications where very low power is required, such as when sensing small signal changes or controlling low-power current flows.
The MUN5213T1G has a variety of uses. It can be used as a low-power amplifier in radio frequency circuits, and is ideal for producing gain in small signal amplifier stages. It is also well-suited for use in telecommunications equipment, where it can be used to amplify small signal changes. Finally, it is suitable for use in consumer electronics, where it can be used for signal switching or for low-power amplification stages.
The working principle of the MUN5213T1G device is based on the flow of current from the collector to the emitter. When current is applied to the base, a layer of electrons is attracted to it and forms the base region. This region acts as a gate that allows current to flow from the collector to the emitter. By controlling the amount of current flowing through the device, it is possible to regulate the amount of current flowing to the load.
The MUN5213T1G is a versatile and reliable device suitable for a wide range of applications. It offers reliable performance in high-frequency circuits, and can be used to amplify small signals or control current flows. In addition, it can be used in a variety of consumer electronic applications, making it an ideal choice for those needing a reliable device for signal switching or amplification stages.
The specific data is subject to PDF, and the above content is for reference
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