MUN5135T1G Allicdata Electronics

MUN5135T1G Discrete Semiconductor Products

Allicdata Part #:

MUN5135T1GOSTR-ND

Manufacturer Part#:

MUN5135T1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 202MW SC70-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: MUN5135T1G datasheetMUN5135T1G Datasheet/PDF
Quantity: 15000
3000 +: $ 0.01788
6000 +: $ 0.01613
15000 +: $ 0.01402
30000 +: $ 0.01262
75000 +: $ 0.01122
150000 +: $ 0.00935
Stock 15000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MUN51**T
Description

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MUN5135T1G is a type of single pre-biased transistor. It has a high gain, low noise ratio and strong switching speed. MUN5135T1G has various applications in the fields of digital circuit, discrete audio amplification and analog circuits.The MUN5135T1G transistor has a bipolar junction transistor (BJT). It works on a NPN architecture and is composed of three parts; the base, collector and emitter. The base is the control element of the transistor, responsible for controlling the current flow between collector and emitter. A positive voltage applied to the base will cause current to flow between the collector and emitter while a negative voltage applied to the base will inhibit current flow. In a pre-biased transistor, the base and emitter junction of the transistor are connected to a DC voltage source prior to conduction of current in the circuit. This is advantageous over a normal transistor as it requires less effort to activate. Pre-biased transistors are often used in analogue circuits and audio amplifications, as their ability to quickly switch and provide low noise ratio is advantageous in these applications.The MUN5135T1G transistor is a high-performance, wide bandwidth amplifier that provides excellent gain and low noise performance. It has an operating range of 40-220kHz and can provide up to 5 watts of peak power. The device also has an high gain of 80dB and a low noise figure of 0.355dB.The MUN5135T1G transistor is capable of providing high output power with low power consumption and low distortion. It is ideal for applications such as digital circuit amplification, discrete audio amplification, and analog signal amplification. It can also be used for power conversion and signal switching.The device can be used for a wide range of applications such as audio amplifiers, voltage regulators, driver circuit and power converters, power amplifiers, and other applications requiring high switching speed and low noise. It is also commonly used in instrumentation, automotive, industrial, and medical equipment.MUN5135T1G can be used in many applications where its fast switching speed, wide bandwidth, low noise, and high gain are beneficial in providing an ideal low noise amplification solution. This makes it the perfect transistor to use in applications such as audio amplifiers, power converters and signal switching. The device is also very cost-effective and provides excellent performance at a low cost.

The specific data is subject to PDF, and the above content is for reference

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