MUN5214T1G Discrete Semiconductor Products |
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Allicdata Part #: | MUN5214T1GOSTR-ND |
Manufacturer Part#: |
MUN5214T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN5214T1G Datasheet/PDF |
Quantity: | 51000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN52**T |
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MUN5214T1G is a single, pre-biased transistor specifically designed for applications in the electronics industry. It is primarily used in power management applications, as well as other applications such as industrial control, motor control, and audio amplification. The MUN5214T1G is a 45V, 2A switching transistor with a low saturation voltage of 0.3V. It features a high-frequency operation and high-voltage rating, making it suitable for use in a wide range of electronic applications.
The MUN5214T1G has a bipolar junction transistor (BJT) design. It is a three-terminal device, with the emitter terminal having a negative voltage and the collector terminal having a positive voltage. The third terminal, which is the base terminal, acts as a switching contact between the emitter and collector, and a positive current flows through it when the base terminal is activated. This current triggers the flow of electrons from the emitter to the collector, allowing for current conduction through the device.
To understand how the MUN5214T1G works, it is necessary to know the basics of transistor operation. A BJT consists of two p-type semiconductors, also known as P-channel, and two n-channel layers. The p-channel layers are the emitter and collector terminals, with the n-channel layer being the base terminal. When a current is applied to the base terminal, it induces a flow of electrons from the emitter to the collector, allowing current conduction through the device. The amount of current provided to the base terminal determines the amount of current that will flow through the device.
The MUN5214T1G features a pre-biased design, meaning that it is already biased in a specific direction and does not require an external bias voltage to operate. This makes it more suitable for use in applications that require a constant current. Additionally, the MUN5214T1G has a very low saturation voltage, which is the minimum voltage required for the flow of current through the device. Its low saturation voltage makes it well-suited for use in high-frequency applications, where it is essential to minimize energy losses. Finally, it has a high-voltage rating, making it suitable for use in applications that require high-power, high-voltage circuits.
In summary, the MUN5214T1G is a single, pre-biased transistor specifically designed for applications in the electronics industry. It has a bipolar junction transistor (BJT) design and features a pre-biased design and a very low saturation voltage. This makes it well-suited for use in power management and other applications such as industrial control, motor control, and audio amplification. Additionally, it has a high-frequency operation and a high-voltage rating, making it suitable for use in a wide array of electronic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MUN5214T1G | ON Semicondu... | -- | 51000 | TRANS PREBIAS NPN 202MW S... |
MUN5235T1G | ON Semicondu... | -- | 21000 | TRANS PREBIAS NPN 202MW S... |
MUN5211T1G | ON Semicondu... | 0.02 $ | 18000 | TRANS PREBIAS NPN 310MW S... |
MUN5213T1G | ON Semicondu... | -- | 39000 | TRANS PREBIAS NPN 202MW S... |
MUN5233T1G | ON Semicondu... | -- | 15000 | TRANS PREBIAS NPN 202MW S... |
MUN5133T1G | ON Semicondu... | 0.02 $ | 30000 | TRANS PREBIAS PNP 202MW S... |
MUN5215T1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 202MW S... |
MUN5136T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 202MW S... |
MUN5138T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 202MWPr... |
MUN5140T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 202MWPr... |
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MUN5115T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS PNP 202MW S... |
MUN5116T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS PNP 202MW S... |
MUN5234T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS NPN 202MW S... |
MUN5131T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS PNP 202MW S... |
MUN5113DW1T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.25W ... |
MUN5312DW1T1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN/PNP SOT... |
MUN5114DW1T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.25W ... |
MUN5214DW1T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS 2NPN PREBIAS 0.25W ... |
MUN5111T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS PNP 202MW S... |
MUN5135T1G | ON Semicondu... | 0.02 $ | 15000 | TRANS PREBIAS PNP 202MW S... |
MUN5216DW1T1G | ON Semicondu... | -- | 84000 | TRANS 2NPN PREBIAS 0.25W ... |
MUN5335DW1T1G | ON Semicondu... | -- | 51000 | TRANS PREBIAS NPN/PNP SOT... |
MUN5233DW1T1G | ON Semicondu... | 0.04 $ | 3000 | TRANS 2NPN PREBIAS 0.25W ... |
MUN5232DW1T1G | ON Semicondu... | 0.03 $ | 6000 | TRANS 2NPN PREBIAS 0.25W ... |
MUN5230DW1T1G | ON Semicondu... | 0.04 $ | 27000 | TRANS 2NPN PREBIAS 0.25W ... |
MUN5135DW1T1G | ON Semicondu... | -- | 18000 | TRANS 2PNP PREBIAS 0.25W ... |
MUN5333DW1T1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN/PNP SOT... |
MUN5232T1G | ON Semicondu... | 0.02 $ | 15000 | TRANS PREBIAS NPN 202MW S... |
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MUN5237T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 202MW S... |
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