Allicdata Part #: | MUN5316DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5316DW1T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | MUN5316DW1T1G Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.02860 |
6000 +: | $ 0.02487 |
15000 +: | $ 0.02114 |
30000 +: | $ 0.01990 |
75000 +: | $ 0.01865 |
150000 +: | $ 0.01658 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | MUN53**DW1 |
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MUN5316DW1T1G is an array of bipolar junction transistors (BJT) with a pre-biased setup. It is typically used in many applications like amplifiers, H-bridges and automated switch controllers. Its special features include low power consumption, high integration performance, and faster switching speeds.
A bipolar junction transistor (BJT) is a type of electronic component that utilizes a three-terminal design. It consists of two p-n junctions combined in a single unit. BJTs can be divided into two types: npn and pnp. The npn BJT has an N + and an N - type semiconductor material, and the pnp BJT has a P + and a P - type material.
The MUN5316DW1T1G array consists of 11 identical NPN high voltage transistors pre-biased in a certain way. Each transistor has an emitter-collector breakdown voltage of 1500 volts, and can handle up to 2.5 amps of continuous collector current. It is designed to work at a range of temperature from -55°C to 150°C.
The purpose of this array is to provide the user with a quick and easy way to control large number of transistors in a single package. It eliminates the need for manual wiring, and thus, reduces the cost and time associated with the assembly of circuits. The pre-biased configuration of the transistors makes it easier to drive the transistors, which enables faster switching speeds.
As far as its applications go, the MUN5316DW1T1G array can be used in a variety of fields, such as motor control, power supplies and communications. It can be used in amplifiers and H-bridges, where it provides a good combination of voltage, current and power dissipation. This makes them particularly useful for driving audio power amplifiers. Additionally, these transistors can also be used in automated switch controllers, as they are reliable and have a low power consumption.
The working principle of this array is quite simple. When the base of the transistor is driven from an input source, the collector current is steered from the collector to the emitter, producing an output voltage. The output voltage is a function of the input voltage. The magnitude of the output voltage and current can be controlled by varying the input voltage.
The MUN5316DW1T1G array is quite versatile, and it can be utilized in a variety of applications. Its pre-biased design allows for quick and easy setup, while its low power consumption enables long battery life. Additionally, its low operating temperatures make it ideal for many applications and its high voltage, current and power dissipation capabilities make it especially useful in motor control and communication applications.
The specific data is subject to PDF, and the above content is for reference
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