Allicdata Part #: | MUN5116T1G-ND |
Manufacturer Part#: |
MUN5116T1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN5116T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01586 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN51**T |
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MUN5116T1G is a pre-biased single bipolar junction transistor (BJT) designed to deliver high-performance power control solutions. The device comes in an ultra-compact 0.6 mm×1.0 mm SOT-23 package, allowing power control in the most space-constrained mobile devices. The device is rated for applications requiring a low Collector-Emitter Voltage range of 5-20 V and can handle up to 1 A continuous current in a -55\u00b0C to +150\u00b0C temperature range.
The MUN5116T1G BJT has a high switching frequency of 5 MHz and is capable of providing very low output-power dissipation. The device features a low threshold voltage of 2.0 V, a low operating temperature range from -55\u00b0C to +150\u00b0C and a low gate leakage current of 10 \u00b5A. The device also has a high off-state resistance of 20 k\u03a9, a low maximum on-state resistance of 0.07 \u03a9 and an on-state delay time of 0.85 ns.
The MUN5116T1G is pre-biased, meaning that it can be used without an additional operating bias. This allows the device to be used in low-power, low-voltage applications, such as portable and mobile device power control systems. The pre-biased feature eliminates the need for an additional operating bias, reducing overall system power consumption and improving system efficiency. Due to its small size and low operating voltage and current requirements, the device is well-suited for use in space-constrained mobile devices.
In terms of working principle, the MUN5116T1G is a three-terminal BJT device whose primary function is to control the current flow between the Collector and the Emitter. The input signal is applied to the Gate and the output current is fed from the Collector to the Emitter. When no input signal is applied to the Gate, the BJT acts as an open circuit, blocking all current from passing. When a positive input signal is applied, the BJT conducts current and allows it to flow through the Collector-Emitter circuit, thus providing power control.
Due to its small size, high switching frequency and low operating voltage, the MUN5116T1G is ideal for use in a wide range of power control applications, such as server power supplies, automotive and industrial lighting systems, communication systems and consumer electronics. It is also capable of enhancing system performance and reliability, as well as improving power efficiency and cost-effectiveness. The device is designed to provide reliable and robust power control solutions in both small spaces and large installations.
The specific data is subject to PDF, and the above content is for reference
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