MUN5213DW1T3G Allicdata Electronics
Allicdata Part #:

MUN5213DW1T3G-ND

Manufacturer Part#:

MUN5213DW1T3G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: MUN5213DW1T3G datasheetMUN5213DW1T3G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02069
Stock 1000Can Ship Immediately
$ 0.02
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: MUN52**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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MUN5213DW1T3G is a type of pre-biased transistor array integrated circuit (IC) developed by VISHAY SILICONIX. It is characterized as a an array of two NPN transistors, two diodes, and two resistors.

The unit is intended for medium power and low-frequency application as an amplifier, switch, or circuit protection device. It is suitable for use in consumer, industrial, and automotive electronics circuits. The MUN5213DW1T3G is available in a 4-pin plastic housing, and has a Pb-free (RoHS compliant) lead-free finish.

MUN5213DW1T3G transistors are made with a PNP and NPN structure, and feature a collector-emitter breakdown voltage of 50V. The unit can handle up to 200mA of continuous current, depending on the operating temperature, and is rated at a frequency of 1000khz. Its total spread of collector-base and collector-emitter voltages is 150V.

The MUN5213DW1T3G can be used in many applications, such as:

  • Switch control circuits
  • Heating protection circuits
  • Battery discharge protection circuits
  • HVAC (heating, ventilation and air conditioning) circuits
  • Electronic signs
  • Automotive electronics

The MUN5213DW1T3G is pre-biased, which means that a bias configuration is already established between the NPN and PNP transistors. This design allows the unit to work with a lower quiescent current than a non-pre-biased transistor system. This helps reduce the heat production of the circuit, and allows the unit to operate in a wider range of temperatures.

The MUN5213DW1T3G also includes two resistors and two diodes. The resistors reduce the current in collectors up to the specified limits. By dissipating the increased current, they protect the unit from damage due to an electrical overload. The two diodes help to avoid any reverse bias current flow, protecting the NPN transistors from any unwanted current.

In summary, the MUN5213DW1T3G is an integrated circuit designed for low power and low frequency applications. Its pre-biasing features makes it an ideal choice for a wide range of applications. The built-in resistors and diodes make it a safe and reliable choice for long-term use.

The specific data is subject to PDF, and the above content is for reference

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