MUN5211DW1T1 Allicdata Electronics
Allicdata Part #:

MUN5211DW1T1OSCT-ND

Manufacturer Part#:

MUN5211DW1T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: MUN5211DW1T1 datasheetMUN5211DW1T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Base Part Number: MUN52**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The MUN5211DW1T1 is a pre-biased array of bipolar (BJT) transistors with the purpose of amplifying an electronic signal. This device has a variety of different applications, and is used in many modern electronic circuits. The MUN5211DW1T1 is designed to provide amplification, and can be used in applications that require low-power, low-voltage operation. The device is also suitable for audio amplifiers, active filters, current sensors, and other applications where high gain, low-noise operation is required.

The MUN5211DW1T1 is a low-power, low-voltage integrated circuit made up of a pre-biased array of transistors. The device consists of two NPN transistors and two PNP transistors, connected in series. The transistors are each pre-biased to a certain voltage level, allowing them to act as a gain stage for the input signal, providing amplification. This pre-biased arrangement also allows the device to be used in applications that require low-voltage operation. By default, the device is designed to operate at 5V, but can also be operated at 12V, 18V, and 24V.

The MUN5211DW1T1 has an extremely low power consumption, so it is suitable for applications that require low-power operation. It also has a high-gain bandwidth of up to 10MHz, so it is suitable for achieving high gain levels with minimal noise. The device is also designed to have a low-profile, allowing it to be used in more cramped environments. The device is also available in two different packages, a small SOT-23 package, and a larger SOT457-3 package.

In addition to being pre-biased, the MUN5211DW1T1 also has a built-in current source for powering the device. This current source pulls a current from the supply voltage, which is then used to bias the transistors and create an amplification stage. The current source also helps reduce noise and power consumption, as well as improve the device\'s stability.

The MUN5211DW1T1 is a versatile, low-power device that can be used in a variety of applications. It is suitable for audio amplifiers, active filters, current sensors, and other applications where high gain and low noise is required. The device is designed to provide reliable operation in both low-voltage and high-voltage scenarios, making it a great choice for many different kinds of applications.

The specific data is subject to PDF, and the above content is for reference

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