Allicdata Part #: | MUN5211DW1T1OSCT-ND |
Manufacturer Part#: |
MUN5211DW1T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | MUN5211DW1T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Base Part Number: | MUN52**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The MUN5211DW1T1 is a pre-biased array of bipolar (BJT) transistors with the purpose of amplifying an electronic signal. This device has a variety of different applications, and is used in many modern electronic circuits. The MUN5211DW1T1 is designed to provide amplification, and can be used in applications that require low-power, low-voltage operation. The device is also suitable for audio amplifiers, active filters, current sensors, and other applications where high gain, low-noise operation is required.
The MUN5211DW1T1 is a low-power, low-voltage integrated circuit made up of a pre-biased array of transistors. The device consists of two NPN transistors and two PNP transistors, connected in series. The transistors are each pre-biased to a certain voltage level, allowing them to act as a gain stage for the input signal, providing amplification. This pre-biased arrangement also allows the device to be used in applications that require low-voltage operation. By default, the device is designed to operate at 5V, but can also be operated at 12V, 18V, and 24V.
The MUN5211DW1T1 has an extremely low power consumption, so it is suitable for applications that require low-power operation. It also has a high-gain bandwidth of up to 10MHz, so it is suitable for achieving high gain levels with minimal noise. The device is also designed to have a low-profile, allowing it to be used in more cramped environments. The device is also available in two different packages, a small SOT-23 package, and a larger SOT457-3 package.
In addition to being pre-biased, the MUN5211DW1T1 also has a built-in current source for powering the device. This current source pulls a current from the supply voltage, which is then used to bias the transistors and create an amplification stage. The current source also helps reduce noise and power consumption, as well as improve the device\'s stability.
The MUN5211DW1T1 is a versatile, low-power device that can be used in a variety of applications. It is suitable for audio amplifiers, active filters, current sensors, and other applications where high gain and low noise is required. The device is designed to provide reliable operation in both low-voltage and high-voltage scenarios, making it a great choice for many different kinds of applications.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
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