| Allicdata Part #: | MUN5313DW1T1GOSTR-ND |
| Manufacturer Part#: |
MUN5313DW1T1G |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS NPN/PNP SOT363 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: |  MUN5313DW1T1G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.02891 |
| 6000 +: | $ 0.02514 |
| 15000 +: | $ 0.02137 |
| 30000 +: | $ 0.02011 |
| 75000 +: | $ 0.01886 |
| 150000 +: | $ 0.01676 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Base Part Number: | MUN53**DW1 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type: | Surface Mount |
| Power - Max: | 250mW |
| Frequency - Transition: | -- |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 47 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The MUN5313DW1T1G transistors are composed of a single NPN, PNP, or Darlington pair. These transistors can be used in a variety of configurations, such as single-ended, common-collector, common-emitter, and common-base. The MUN5313DW1T1G transistors feature low on-state capacitance and low on-state resistance, which enables them to handle high-frequency signals. Additionally, the transistors feature high voltage gain, which makes them ideal for high-voltage applications.
The main working principle of the MUN5313DW1T1G transistors is to regulate the current flow through the transistor by controlling the voltage applied to the base connection. When the voltage at the base connection is increased, the amount of current flowing through the transistor increases, and when the voltage is reduced, the amount of current decreases. This allows the transistors to be used to regulate the flow of current in high-voltage circuits.
The main application field of the MUN5313DW1T1G transistors is in AC and DC voltage regulation. In this application, the transistors are used to regulate the voltage across the circuit by controlling the current flow. Additionally, the transistors can also be used for current sensing, switch mode power supplies, low noise amplifiers, H-bridges, and logic gates.
The MUN5313DW1T1G transistors are robust and reliable devices that provide many advantages over conventional BJTs. The transistors feature a low on-state resistance, high voltage gain, low input capacitance, and high current gain, which make them ideal for a variety of applications. Additionally, the transistors are available in a variety of packages, and they come pre-biased, which makes them easy to use and less prone to damages.
The MUN5313DW1T1G transistors are versatile, reliable, and easy-to-use devices that can be used in a wide range of applications. The transistors feature low on-state resistance and high voltage gain, while also featuring low input capacitance and high current gain. Additionally, the transistors are available in a variety of packages, and they come pre-biased, which makes them easy to use and less prone to damages.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| MUN5214DW1T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS 2NPN PREBIAS 0.25W ... |
| MUN5111T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS PNP 202MW S... |
| MUN5135T1G | ON Semicondu... | 0.02 $ | 15000 | TRANS PREBIAS PNP 202MW S... |
| MUN5216DW1T1G | ON Semicondu... | -- | 84000 | TRANS 2NPN PREBIAS 0.25W ... |
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