MUN5234DW1T1 Allicdata Electronics
Allicdata Part #:

MUN5234DW1T1-ND

Manufacturer Part#:

MUN5234DW1T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: MUN5234DW1T1 datasheetMUN5234DW1T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: MUN52**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The MUN5234DW1T1 is a low voltage array pre-biased transistors. It is designed to fit easily into a wide range of applications. The device is ideal for use in a variety of switching, amplifying, and driving applications.

The array consists of two NPN transistors connected in parallel and pre-biased to a negative voltage. This allows the transistor to be used in a variety of circuits with minimal modifications. The two transistors are connected with a bias resistor, which helps ensure that the voltage across the transistors is kept at a constant level and that current will flow when a small signal is presented to the device. The two transistors in the array are arranged in such a way that the collector-to-emitter voltage is optimized for fast switching and reduced power consumption.

The MUN5234DW1T1 is ideal for use in power switching applications, as it can provide efficient switching of large signals with minimal distortion and low power consumption. The transistor can also be used in linear amplifier and drive circuits, providing excellent frequency and gain response. The device can be used to create an audio amplifier circuit with a wide dynamic range and excellent noise rejection. In addition, the transistor is well suited for DC to DC converters, providing efficient conversion and isolation in a wide range of applications.

The MUN5234DW1T1 is also well-suited for use in signal conditioning and sensing applications. It can be used to measure signal levels and to provide signal isolation. The high input impedance of the transistor ensures that signal levels are accurately measured and that disruption to the measured signal is kept to a minimum. In addition, the transistor can be used to create a bridge circuit, with the two transistors providing isolation of the input and output signals. The high input impedance of the device also allows for the use of the transistor in isolation amplifiers, providing a high level of signal isolation and amplification with minimal noise.

The MUN5234DW1T1 can be used in a variety of circuits to provide efficient switching and amplification. Its pre-biased design reduces power consumption and ensures that the device can be used without additional components. Its high input impedance ensures accurate signal measurements and its bridge circuit construction allows for signal isolation and amplification. This makes the MUN5234DW1T1 an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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