Allicdata Part #: | MUN5235T1-ND |
Manufacturer Part#: |
MUN5235T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN5235T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN52**T |
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The MUN5235T1 is a single, pre-biased bipolar junction transistor (BJT) made by Fairchild Semiconductor. As a pre-biased BJT, it is designed to minimize power dissipation and offer improved ESD robustness. This device has applications in a wide range of industries, including consumer electronics, robotics and medical devices.The MUN5235T1 is a dual NPN/PNP structure BJT, featuring integrated pre-biased complementary control. This integrated structure offers improved control of the output voltage, enabling better switching performance and reduced power dissipation. The device is commonly used in high-side and low-side switch design to provide rapid bipolar switching with low switching losses. Pre-biased NPN gives lower saturation voltage output while PNP gives higher saturation voltage output.The device also offers a built-in thermal shutdown protection feature. It activates when the device temperature exceeds a certain threshold and shuts off the device when the temperature rises beyond a certain level. This thermal cutoff stops damage to the device due to overheating. The MUN5235T1 is also equipped with a built-in active latch-off switch for protection against ESD and transients.The pre-biased BJT structure of the MUN5235T1 makes it ideal for switching applications. The PNP and NPN transistors are both pre-biased, enabling faster switching speeds and improved dynamic response. The BJT structure also eliminates the need for additional components like pull-down resistors, saving time and space in the design process.In terms of operational characteristics, the MUN5235T1 is rated for a maximum collector-emitter voltage of 30V and a maximum collector-base voltage of 30V. It has a maximum breakdown voltage of 30V and a maximum on-state current of 350mA. It also offers a collector-emitter saturation voltage of -1V and an equivalent on-state resistance of 310mohm. The MUN5235T1 is commonly used in switching power supplies and motor control circuits, offering fast switching speeds, improved control of the output voltage, and reduced power dissipation. It is also suitable for use in robotics and medical devices, allowing improved control of the output voltage.The MUN5235T1 is a versatile single, pre-biased BJT that is ideal for switching applications. Its integrated pre-biased complementary control enables fast switching speeds and improved control of the output voltage. It also offers a built-in thermal shutdown protection and active latch-off switch for protection against ESD and transients. Its wide range of applications make it a popular choice for a variety of industries, including consumer electronics, robotics, and medical devices.
The specific data is subject to PDF, and the above content is for reference
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MUN5214T1G | ON Semicondu... | -- | 51000 | TRANS PREBIAS NPN 202MW S... |
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