MUN5231DW1T1G

DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 5mA, 10V
Base Part Number:	MUN52**DW1T
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	2.2 kOhms
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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MUN5231DW1T1G is a high performance, low gate-source capacitance, pre-biased, N-channel MOSFET array with an integrated NPN bipolar transistor. It is primarily used in high frequency switching applications with a maximum operating frequency of up to 700MHz. It is designed to be pre-biased and comes with an integrated transistor which provides excellent temperature stability and improved switching speed.This pre-biased MOSFET array is designed for a wide range of applications such as radio receivers and transmitters, class D audio amplifiers, LED lighting, power supplies, stepper motor drivers and more. It is also suitable for use as a rugged, low cost, highly integrated alternative to discrete FETs in RF and high frequency switching applications.The MUN5231DW1T1G is a Dual 6-channel, pre-biased, lateral MOSFET array which is available in the small SOT-521 package. This compact package features a spacing of 0.65mm between pins and a height of just 1.6mm. This makes it perfect for applications where space is at a premium such as mobile phones, LED lighting and other hand-held devices.This device is manufactured using standard sub-micron N-channel MOSFET processes, resulting in a solid-state, robust design with extremely low gate-source capacitance. This feature offers reduced switch-on delay times and improved transient response in high frequency applications. The array is also pre-biased, allowing it to be connected directly to a supply voltage to reduce the number of components required.The integrated NPN bipolar transistor provides excellent temperature stability and improved switching performance. The bias voltage is generated internally from the collector-base junction of the transistor and is independent of the drain/source voltage. This feature eliminates the need for external components, reducing the complexity and cost of the switching circuit. The MUN5231DW1T1G is capable of carrying up to 540mA of current and operating at temperatures up to +125°C. It also features reverse polarity protection, over-temperature shutdown and over-current protection to ensure reliable operation in harsh environments. In summary, the MUN5231DW1T1G is a high performance, low gate-source capacitance, pre-biased, N-channel MOSFET array with integrated NPN bipolar transistor. It is designed for a wide range of applications and is well-suited to high frequency switching applications due to its low capacitance, high operating frequency and excellent temperature stability. The integrated transistor eliminates the need for external components, reducing cost and complexity.

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