MUN5136DW1T1 Allicdata Electronics
Allicdata Part #:

MUN5136DW1T1OS-ND

Manufacturer Part#:

MUN5136DW1T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: MUN5136DW1T1 datasheetMUN5136DW1T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: MUN51**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MUN5136DW1T1 arrays are a type of vertical pre-biased NPN double transistor array consisting of four independent, higher gain transistors. They are primarily used in signal switching and signal conditioning applications such as audio, video and telecommunications. The MUN5136DW1T1 transistors are manufactured with high-performance NPN transistors and are available in a wide variety of packages, and feature a guaranteed minimum gain of 70, a guaranteed power dissipation of 1 Watt and an industry standard temperature co-efficient of -2 mA/degreeC.

The MUN5136DW1T1 arrays are pre-biased, which means that each package contains four individual transistors with a built-in bias voltage. This bias voltage is referred to as the “start-up” voltage and is typically between 4 and 5 Volts for the MUN5136DW1T1 arrays. The “start-up” voltage allows the transistors to “turn on” more quickly than is possible with a conventional large-signal transistor and also contributes to faster switching speeds and higher frequency operation.

The working principle of the MUN5136DW1T1 arrays is relatively simple. When the supply voltage applied to the device is less than the “start-up” voltage of the transistors, the transistors remain in their non-conduction state, allowing no current to flow. However, when the supply voltage is raised above the “start-up” voltage, the transistors become forward biased, allowing current to flow through them. Depending on the application, the current can be either AC or DC, and the transistors are capable of handling both low and high frequency signals.

The MUN5136DW1T1 transistors are ideal for a variety of applications in signal switching and conditioning. They can be used as switches for audio and video signals, for example, to switch between different sound sources or to switch between different video input sources. They can also be used for communications, where they can be used to switch between radio signals of different frequencies. Other applications include low-noise amplifiers, RF switches, and power amplifiers in consumer electronics.

In conclusion, the MUN5136DW1T1 transistors are a reliable and versatile vertical pre-biased NPN double transistor array device suitable for a wide range of applications, particularly in signal switching and signal conditioning. By using the “start-up” voltage of each package, the transistors can be quickly switched on and off, allowing them to be used in higher frequency applications such as those used in telecommunications or consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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