| Allicdata Part #: | MUN5131T1-ND |
| Manufacturer Part#: |
MUN5131T1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS PNP 202MW SC70-3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: |  MUN5131T1 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 2.2 kOhms |
| Resistor - Emitter Base (R2): | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 202mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SC-70-3 (SOT323) |
| Base Part Number: | MUN51**T |
Description
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MUN5131T1 is a single, pre-biased bipolar junction transistor (BJT) which has a wide range of applications in industries where size and cost are important factors such as consumer electronic products. This device is especially suitable for applications such as low voltage power switching, audio amplifiers and video drivers. In this article, we will discuss the application field and the working principle of the MUN5131T1.The MUN5131T1 has two main characteristics that make it suitable for its applications. First, the device is a pre-biased BJT, meaning that it has a built-in bias voltage. This allows the device to operate in a quasi-active mode even at low supply voltages, increasing its efficiency and reducing the amount of external circuitry required, which translates in lower cost and smaller footprint. Second, the MUN5131T1 can operate at high temperatures up to 125°C, making it suitable for harsh conditions and automotive applications.The MUN5131T1 is composed of two NPN and two PNP transistors configured inDarlington connection. The device has a maximum collector-emitter saturation voltage of 0.1V and a maximum collector-emitter voltage of 50V. It also features a maximum operating frequency of 50MHz and a maximum current rating of 1.2A.The working principle of the MUN5131T1 is based on the basic operation of two BJT transistors in a common-collector configuration. In this configuration, the two transistors act as amplifiers, with the input signal being amplified by the gain of the first transistor and the output being amplified further by the gain of the second stage. The current gain of the MUN5131T1 is typically sufficient for matching needs up to 50MHz and for driving high output currents of up to 1.2A.In summary, the MUN5131T1 is a single, pre-biased BJT designed to meet the needs of industries where size, cost and high temperatures are important factors. Its features make it ideal for applications such as low voltage power switching, audio amplifiers and video drivers. The working principle of the device is based on the basic operation of two BJT transistors in Darlington connection, achieving high current gain and allowing it to drive high output currents.
The specific data is subject to PDF, and the above content is for reference
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