MUN5333DW1T1 Allicdata Electronics
Allicdata Part #:

MUN5333DW1T1-ND

Manufacturer Part#:

MUN5333DW1T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN/PNP SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: MUN5333DW1T1 datasheetMUN5333DW1T1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: MUN53**DW1
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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In the world of transistors, the MUN5333DW1T1 pre-biased transistor array is a specialized type of NPN transistor that is designed to deliver low or zero standing current consumption across multiple applications. This is a convenient and energy-saving device for efficient energy management, particularly when it comes to applications involving very high power consumption.

The MUN5333DW1T1 is a NPN-type transistor array consisting of 9 individual transistors that share a common emitter and base. It has a high breakdown voltage rating of 40V, making it suitable for high power applications. Additionally, the device is pre-biased, meaning that it is already set at the optimum bias conditions and ready to be used without extensive configuration. This makes the device ideal for production of RF power amplifiers, analog switches, multiplexers, and other applications that require a fast and simple setup.

In terms of its working principle, the MUN5333DW1T1 is designed to control the conduction of current between its collector and emitter terminals. It achieves this through the use of a transistor array that switches voltage and current between the collector and emitter. The current flow occurs when a voltage is applied to the base of the transistor, resulting in a current gain determined by the ratio of collector to emitter current. As the base voltage is increased, the gain increases as well, allowing the device to function as either an amplifier or as a switch.

The MUN5333DW1T1 has multiple applications across a variety of industries. Its pre-biased nature allows it to be readily used in multiplexing applications in industrial controls and instrumentation. It can also be used in audio amplifiers, RF power amplifiers, and other analog electronic systems. Additionally, it can be utilized as a high-voltage switch for applications involving up to 40V, such as for AC/DC power supplies, isolation amplifiers, and ringer circuits. Finally, its low current draw makes it a great choice for applications where conserving energy is a priority.

The MUN5333DW1T1 pre-biased transistor array is an important device for energy efficient energy management. Its low current draw and pre-biased nature allow for easy setup with minimal power consumption, and its high breakdown voltage makes it suitable for a wide range of applications. From industrial controls and instrumentation to audio amplifiers and power supplies, the MUN5333DW1T1 can provide the efficient performance and stability needed across a variety of industries.

The specific data is subject to PDF, and the above content is for reference

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