Allicdata Part #: | MUN5234T1-ND |
Manufacturer Part#: |
MUN5234T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN5234T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN52**T |
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MUN5234T1 Application Field And Working Principle
The MUN5234T1 is a type of pre-biased single bipolar transistor (BJT), which is used widely in power management applications. It offers good electrical characteristics, such as a low on-state resistance and a low gate charge. Its application field and working principle are described in detail below.
Application Field
The MUN5234T1 is widely used in consumer applications, such as power management, DC-DC converters, lighting solutions, and motor control. It is also suitable for automotive systems and industrial applications, such as generator control and power supply. Its low on-state resistance and low gate charge make it an ideal choice for various applications.
Additionally, it is also suitable for use in applications such as solar inverters, AC-DC converters, battery management systems, and uninterruptible power supplies (UPS). It is also commonly used in automotive, Industrial, and medical applications.
Working Principle
The MUN5234T1 is a pre-biased single bipolar transistor (BJT) that works in two stages. In the first stage, the collector-emitter junction creates an inversion layer at the base of the transistor. This inversion layer accumulates charge and can be used to control the current flowing through the transistor.
In the second stage, the inversion layer can be modulated by applying an external control voltage to the gate. This control voltage modulates the charge in the inversion layer, which in turn affects the transistor\'s current gain.
The MUN5234T1 offers a low on-state resistance, which is beneficial for power management applications. It also has a low gate charge, which allows for low-loss operation and lower energy losses.
Conclusion
The MUN5234T1 is a pre-biased, single bipolar transistor (BJT) that is used in a wide range of applications, such as power management, DC-DC converters, lighting solutions, and motor control. It is also suitable for automotive systems and industrial applications, such as generator control and power supply. Its low on-state resistance and low gate charge make it an ideal choice for various applications. It works in two stages, where it uses an inversion layer created at the base of the transistor to control the current flowing through the transistor.
The specific data is subject to PDF, and the above content is for reference
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