Allicdata Part #: | NTLJD2104PTAG-ND |
Manufacturer Part#: |
NTLJD2104PTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 12V 2.4A 6WDFN |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 2.4A 700mW Sur... |
DataSheet: | NTLJD2104PTAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 467pF @ 6V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WDFN (2x2) |
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The NTLJD2104PTAG is a 4-volt dual N-channel logic level gate array, utilizing a silicon gate CMOS (Complementary Metal-Oxide-Semiconductor) technology, and is designed to operate from a single +5V to -5V supply. It consists of several Micro-Linkable FETs, designed to provide both signal and power management in a single package. These devices are designed to meet high current requirements, while offering low power dissipation, high capacity, and high performance.
Application Field
The NTLJD2104PTAG is a high performance low voltage gate array best suited for a wide variety of applications, especially where power or signal switching is often used. It can be used for a variety of logic and signal applications, including battery charging applications, where a higher switching current is required. It can also be used for motor control applications as well as for logic and signal switching, with support for both TTL and I2C logic levels. Other applications include LCD and LED display applications, audio and video processing and switching, and data conversion.
Working Principle
The NTLJD2104PTAG gate array is designed to operate from a single +5V to -5V supply. Its Micro-Linkable FETs offer low Rds(on), a low on-state resistance, resulting in high efficiency and low power dissipation. As a result, these devices can easily switch signal and power levels in switching applications. The devices are configured in an N-channel configuration, where a signal applied to the gate is used to control the flow of current through the source and drain. When switched on, the FET offer a low resistance path, allowing current to flow from source to drain. When switched off, the resistance increases, limiting current flow through the FET.
In addition to its low power characteristics, the NTLJD2104PTAG gate array also offers a wide range of logic levels, allowing for interfacing with TTL, I2C, SPI, or other logic lines. Furthermore, the gate array is equipped with protection diodes and a protection circuit, ensuring the safety of operations even in harsh environments. The NTLJD2104PTAG gate array also includes a phase lock loop (PLL) for ultra-low power profiles, as well as an adjustable current limit to help prevent power surges.
In summary, the NTLJD2104PTAG is a high performance low voltage gate array designed to operate from a single +5V to -5V supply, offering a wide range of logic levels, low Rds(on) and low power dissipation. This makes the device ideal for a variety of application and data conversion.
The specific data is subject to PDF, and the above content is for reference
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