NTLJD4150PTBG Allicdata Electronics
Allicdata Part #:

NTLJD4150PTBG-ND

Manufacturer Part#:

NTLJD4150PTBG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 30V 1.8A 6WDFN
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 1.8A 700mW Sur...
DataSheet: NTLJD4150PTBG datasheetNTLJD4150PTBG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 135 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
Description

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The NTLJD4150PTBG is a four-channel, low-noise, enhancement-mode GaN transistor array that is used for a variety of applications in both industrial and consumer electronics. This transistor array is designed with integrated gate circuitry to offer excellent noise characteristics, high speed switching, and low on-resistance.

The NTLJD4150PTBG is one of the latest developments in Power GaN (Gallium Nitride) transistors. This type of transistor is a great choice for low noise and high speed from switching applications as it performs significantly better than a Silicon MOSFET. Power GaN transistors are a popular choice for applications where high power and fast switching speeds are required.

The NTLJD4150PTBG is an enhancement-mode GaN transistor array that is capable of driving higher current than a traditional transistor and offers a wide range of features. This array includes an integrated gate driver, which allows the device to switch from high to low levels very quickly. The on-resistance rating for this device is very low, allowing high-power operation with low losses, making it ideal for applications such as high-power converters, power supplies, and high-output amplifiers.

The working principle of the NTLJD4150PTBG is fairly straightforward. This device is switched on when the gate voltage is applied, allowing current to flow from the source (negative) to the drain (positive). The gate voltage controls the amount of current flowing between the source and drain. The device is switched off when no gate voltage is applied, blocking current flow between the source and drain.

The NTLJD4150PTBG is a great choice for a variety of applications such as motor control, power inverters, audio amplifiers, power supplies, and more. This transistor array is highly reliable and rugged, making it a great choice for industrial applications. In consumer electronics, this device is used for LCD/LED backlighting circuits, LED lighting, interfaces, and video switching.

The NTLJD4150PTBG offers excellent noise characteristics, fast switching speeds, and low on-resistance making it an excellent choice for a wide variety of applications. This device is rugged and reliable, making it ideal for use in industrial and consumer electronics. With an integrated gate driver, this transistor array can switch from high to low levels very quickly and with minimal losses.

The specific data is subject to PDF, and the above content is for reference

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