NTLJD3119CTBG Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTLJD3119CTBG, an array type of transistor, is a 4 channel FET MOSFET array of digital power processing products for the automotive industry. This type of transistor uses the ESD protection and galvanic isolation to reduce the EMI-related stress and improve the performance of the system. It also has the features of wide peak working voltage and low voltage withstanding, making it suitable for many applications. Furthermore, it has a higher power and high temperature resistance, making it ideal for many industrial applications.

The FET MOSFET arrays, as it name implies, consists of an array of four FETs or MOSFETs connected in parallel to form a single circuit. In the NTLJD3119CTBG, each FET or MOSFET has a maximum current rating of 500mA and a maximum voltage rating of 20V, making it suitable for medium power applications. Each FET or MOSFET also has a maximum power dissipation of 8 Watts, making it suitable for high power applications. All of the FETs and MOSFETs have a low impedance and a wide frequency response, making them suitable for high frequency applications.

The main advantage of the NTLJD3119CTBG is its ESD protection and galvanic isolation. This type of transistor is particularly suited for automotive applications because of its ability to reduce EMI interference and provide a safe environment for the electronic components. The ESD protection prevents any external EMI signals from entering the circuit, while the galvanic isolation protects the circuit elements from external conducted and induced noise sources. This feature also helps to prevent the circuit from being affected by external signals, thus keeping the system running smoothly.

Another major advantage of this transistor is its wide peak working voltage and low voltage withstanding. This type of transistor works particularly well for automotive applications as it is able to withstand wide voltage changes due to temperature changes in the environment, or from components running at different voltages. This makes it suitable for applications such as vehicle safety systems, engine management systems and inverters.

In terms of its working principle, the NTLJD3119CTBG operates on the basic principle of the field effect transistor (FET). In the FET, two terminals are connected to the source and drain of the device, while the gate is connected to either the source or the drain. When a voltage is applied to the gate, the conductance of the device changes, allowing it to regulate the current flow through the device. This type of transistor is particularly useful in power switch applications, where an external voltage needs to be switched on and off to regulate the current flow.

The NTLJD3119CTBG FET MOSFET array is especially useful in automotive applications, where it provides excellent ESD protection, wide frequency response and wide peak working voltage and low voltage withstanding. This type of transistor has been designed to weather different conditions and is ideal for use in automotive applications.

The specific data is subject to PDF, and the above content is for reference