NTLJS2103PTBG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	6-WDFN Exposed Pad
Supplier Device Package:	6-WDFN (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	700mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1157pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 4.5V
Series:	µCool™
Rds On (Max) @ Id, Vgs:	40 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTLJS2103PTBG Application Field and Working PrincipleA NTLJS2103PTBG is a type of single-gate Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is commonly used as a power switch and is very easy to use because of its low cost and simple on/off operation. This type of transistor has mainly two internal terminals: source and drain, apart from the external control gate. It provides a very high resistance between the source and drain when the gate voltage is low and no current would flow between them. The resistance decreases rapidly with the increase in the gate voltage, which allows current to flow from the source-drain.The NTLJS2103PTBG\'s application field is quite wide. It is extensively used in the field of electronics due to its high current handling capacity, low on-resistance and low gate drive voltage. It is mainly employed as a power switch in various electronics applications such as amplifiers, motor speed control, motor starters and stepper motor control. This type of transistor can also be found as part of integrated circuits in applications like switching regulators, lighting control, ultra-low-noise amplifiers, metering, wireless communication, medical equipment and other high-precision applications.The NTLJS2103PTBG transistor works by using electric fields. When a sufficiently big electric field is applied, the electrons in the MOS channel generate an electric current. This current is then drawn from the source to the drain and it can either be completely off or completely on.The source terminal of the transistor is connected to the positive (and sometimes negative) voltage supply line of the circuit, while the drain is connected to the load. The drain-source channel is formed by inserting a thin layer of insulating material between the gate and the source-drain region. A voltage is then applied to the gate and this voltage is also known as the “gate threshold voltage”.When the gate voltage is low, a high resistance is established between the source and the drain, which prevents current to flow. If the gate voltage is increased above the gate threshold voltage, the resistance decreases drastically and current can flow from the source to the drain. Thus, the NTLJS2103PTBG transistor can be used to switch a large current between the source and drain terminals.Furthermore, the NTLJS2103PTBG transistor also has a very low on-resistance, which makes it ideal for high-power applications. In addition to that, the gate voltage can be reduced to a very low value without affecting the off-state resistance. This popular transistor is easily available in different sizes and packages and it is incredibly easy to integrate them into all kinds of electronic circuit designs.The NTLJS2103PTBG transistor is an excellent choice for any power switch or high-current applications and its simplicity and low cost make it a very attractive choice for all kinds of applications. It works very reliably, is capable of handling a lot of power and can be used to control many different loads. With its wide application field, this type of MOSFET should be a popular choice for any integrated circuit designer looking to build power efficient and high-performance circuits.

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