Allicdata Part #: | NTLJD2105LTBG-ND |
Manufacturer Part#: |
NTLJD2105LTBG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 8V 2.5A 6-WDFN |
More Detail: | Mosfet Array N and P-Channel 8V 2.5A 520mW Surface... |
DataSheet: | NTLJD2105LTBG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 520mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WDFN (2x2) |
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The NTLJD2105LTBG is a n-channel logic field-effect transistor array that is capable of operating at high temperatures. The device\'s temperature range is rated up to 175°C, and its maximum power dissipation is 1.5W. The NTLJD2105LTBG is composed of a set of single n-channel enhancement-mode transistors housed in a quad configuration. The transistors are specially designed to provide high-frequency performance with low on-resistance and low gate charge. In addition, the NTLJD2105LTBG features low capacitance gate-drain overlap, making it ideal for high-speed logic applications.
The NTLJD2105LTBG features a logic level gate drive that allows for the use of low voltage logic levels to achieve high switching speeds. The logic gate drive reduces Gate-Source threshold voltage, making the device suitable for wide range of logic inputs. In addition, the NTLJD2105LTBG has low on-state resistance and fast power handling due to its high switching speeds. This makes it ideal for switching power supplies and digital circuits.
The NTLJD2105LTBG has several features that make it suitable for low voltage DC to DC converters. The device has a logic input for controlling transistor state, as well as a TTL flash interface for programming the logic states. In addition, the device has a burst mode for obtaining increased power efficiency, and a lockout protection to prevent overcurrent. The protection circuitry also features adjustable current limit and temperature sensing capabilities.
The working principle of the NTLJD2105LTBG is relatively simple. The device has four transistors, each of which is controlled by one of the four channels in the device. If a logic signal is applied to the gate of one of the transistors, the transistor will turn on and allow current to flow through it. The current flow is limited by the gate-source voltage and the on-state resistance of the transistor. When the logic signal is removed, the transistor turns off and no current flows through it. The four transistors can be programmed to either operate in parallel or in series, depending on the application.
In summary, the NTLJD2105LTBG is a n-channel logic field-effect transistor array with high temperature and high-frequency operation. It features low on-resistance and low capacitance gate-drain overlap, making it ideal for high-speed logic applications. In addition, the device has several features that make it suitable for low voltage DC to DC converters, such as a logic input, TTL flash interface, and built-in protection circuits. The NTLJD2105LTBG is an ideal choice for digital circuit and switching power supply applications.
The specific data is subject to PDF, and the above content is for reference
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