Allicdata Part #: | NTLJD3181PZTBG-ND |
Manufacturer Part#: |
NTLJD3181PZTBG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 2.2A 6WDFN |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.2A 710mW Sur... |
DataSheet: | NTLJD3181PZTBG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 10V |
Power - Max: | 710mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WDFN (2x2) |
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The NTLJD3181PZTBG is a high-performance, low-power, self-cascading advanced logic device manufactured by Panasonic. This device is suitable for use in a wide range of electronic devices, including computers and telecommunications equipment. This device is also popular in the automotive industry, and is used in many vehicle applications. In this article, we\'ll discuss the applications and working principle of the NTLJD3181PZTBG.
The NTLJD3181PZTBG belongs to the Transistors FETs, MOSFETs Array family of devices. This type of device is a type of integrated circuit that contains multiple transistors and electronic components, arranged in an array of interconnected gate electrodes, to create a highly efficient logic circuit. This arrangement provides extremely high-speed logic operations, allowing for high-speed switching and data transmission. The NTLJD3181PZTBG uses a special gate structure, which uses four interconnected gate elements, to form a cross-coupled transistor network.
The NTLJD3181PZTBG is primarily used in high-speed switching applications, such as in memory systems, logic gates and high-speed data communication systems. It can also be used in computer and telecom systems, as well as in automotive applications. In automotive applications, the device is used for signal processing and for power management. In memory systems, this type of device can be used for address and data bus controls, as well as for signal conditioning. In high-speed data communication systems, the device is used for signal routing and amplification, as well as for data synchronization.
The working principle of the NTLJD3181PZTBG is based on the field-effect transistor (FET) principle. A FET is a semiconductor device in which a voltage applied to one terminal, known as the gate, can control the current flowing between the two other terminals, known as the source and the drain. The NTLJD3181PZTBG uses four interconnected FETs in a cross-coupled transistor network, providing extremely fast switching and data access. The device is designed to operate in both digital and analog applications, providing a high degree of flexibility.
The NTLJD3181PZTBG is well-suited for use in a variety of applications, such as in high-speed switching, data communication, memory systems, and automotive applications. This device is highly efficient and provides high-speed operations in a small package. The device is also highly reliable, making it an ideal choice for mission-critical applications.
The specific data is subject to PDF, and the above content is for reference
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