NTLJS4114NT1G Allicdata Electronics

NTLJS4114NT1G Discrete Semiconductor Products

Allicdata Part #:

NTLJS4114NT1GOSTR-ND

Manufacturer Part#:

NTLJS4114NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 3.6A 6-WDFN
More Detail: N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6...
DataSheet: NTLJS4114NT1G datasheetNTLJS4114NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Series: µCool™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTLJS4114NT1G is a single MOSFET device that can be used in a wide variety of applications. It is a commonly used component in scenarios where power needs to be controlled, such as power supply design and high-speed switching. It is widely used in industrial and commercial applications, as well as in consumer electronics. This device has a low on-resistance and a fast switching speed, making it ideal for many applications.

The NTLJS4114NT1G is a single-channel N-type MOSFET. It has a drain-source voltage rating of 40V, a drain-gate voltage of 20V, a gate-source voltage of 20V, and an on-resistance of 4.6 ohms. The device is designed to have a low gate threshold voltage, which allows for more efficient operation with low gate voltages. The device is capable of handling a continuous drain-source current of 4.0A, which can be increased to 7.8A when operating in pulsed mode.

The working principle of the NTLJS4114NT1G is based on the basic properties of a MOSFET. A MOSFET is a three-terminal device, consisting of a source, gate, and drain terminal. The device uses an electric field between the gate and drain terminals to control the current flow between the source and drain. In this case, the NTLJS4114NT1G is an enhancement-mode MOSFET, which means that a positive voltage on the gate terminal will increase the conductance between the source and drain terminals. Conversely, a negative voltage on the gate terminal will reduce the conductance between the source and drain.

The NTLJS4114NT1G is widely used in power supply design due to its fast switching speed and low on-resistance. By connecting the device between the power source and the load, the power supply can be controlled in a precise manner. The device can be used in both DC and AC power supply designs, allowing for precise control of power delivery to the load. The device can also be used in high-speed switching scenarios, allowing for fast response times and minimal power loss.

The NTLJS4114NT1G is also used in motor controllers and variable-speed drives. It can be used to control the speed and position of a motor, as well as to adjust the torque and current delivered to the motor. The device can be used to regulate the power or voltage supplied to the motor, allowing for precise control of the motor and its associated components.

The NTLJS4114NT1G is a versatile device that can be used in a wide variety of applications. Its low on-resistance and fast switching speeds make it ideal for power supply and high-speed switching scenarios. It is also used in motor controllers and variable-speed drives, allowing for precise control of power, speed, and position. Its wide range of applications makes it a commonly used device in many different industries.

The specific data is subject to PDF, and the above content is for reference

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