NTLJF4156NT1G Discrete Semiconductor Products |
|
Allicdata Part #: | NTLJF4156NT1GOSTR-ND |
Manufacturer Part#: |
NTLJF4156NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 2.5A 6-WDFN |
More Detail: | N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6... |
DataSheet: | NTLJF4156NT1G Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WDFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 710mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 427pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tj) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTLJF4156NT1G is a single N-Channel field-effect transistor (FET) produced by ON Semiconductor Corp. It has an operating temperature range of -55 to 150°C and is ideal for linear and switching applications. This product is packaged in a standard TO-220 package and has a mounting configuration of the drain connected to the tab. It is commonly used in high-side switching and low-side applications, as well as in voltage stabilisation circuits.The NTLJF4156NT1G transistor is a FET with an N-channel enhancement mode. This particular transistor is composed of two regions on a semiconductor substrate. The source and the drain form an oxygen-enriched N-type semiconductor material and are connected together by a lightly doped N-type region known as the channel. The gate, which is the third electrode, is responsible for controlling the current flow through the channel by varying the voltage applied to it. Depending on the polarity of the applied voltage, the current flow through the transistor increases or decreases since the voltage on the gate affects the width of the channel.The NTLJF4156NT1G can be used for switching and linear applications. In linear applications, the device is operated in its active region, in which the gate voltage is between the source and the drain. This turns the transistor on, allowing the current to flow between the source and drain. The drain-source resistance of the device is a function of the gate–source voltage and can be used to control the amount of current flowing through the transistor.In switching applications, the device is usually operated in its cut-off region, where the gate-source voltage is sufficient to block any current flow between the source and the drain. This is often achieved by grounding the gate. This can be used in such low-side switching applications as switching relays, solenoids, and other inductive loads.In other sensing and signal processing applications, the NTLJF4156NT1G transistor can be used as a voltage-or current-controlled switch. In these cases, the device is operated in its saturation, or linear, region. This allows the transistor to switch between the conductive and non-conductive states using a small signal applied to the gate, thus making it a low-cost transistor switch.Finally, this transistor can also be used in voltage-stabilization circuits. Here, the device is typically operated in the active region, depending on the application. It can be used in linear regulators as a control element for the output voltage or in switching regulators as a sort of logic gate.In conclusion, the NTLJF4156NT1G is a single N-Channel field-effect transistor produced by ON Semiconductor Corp. It is ideal for linear and switching applications, such as low-side switching, sensing and signal processing, and voltage-stabilization circuits. The NTLJF4156NT1G transistor has a standard TO-220 package, with the drain connected to the tab, and an operating temperature range of -55 to 150°C.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NTLJS1102PTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 8V 3.7A 6-WDF... |
NTLJS1102PTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 8V 3.7A 6-WDF... |
NTLJD3182FZTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.2A 6-WD... |
NTLJD3182FZTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.2A 6-WD... |
NTLJS3180PZTAG | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 3.5A 6-WD... |
NTLJS3180PZTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.5A 6-WD... |
NTLJS3A18PZTWG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 8.4A WDFN... |
NTLJS3A18PZTXG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 8.4A WDFN... |
NTLJS4149PTBG | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 4.6A SGL ... |
NTLJS4159NT1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.6A 6-WF... |
NTLJF3117PTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.3A 6-WD... |
NTLJF3118NTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.6A 6-WD... |
NTLJF3118NTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.6A 6-WD... |
NTLJS2103PTAG | ON Semicondu... | -- | 1000 | MOSFET P-CH 12V 3.5A 6-WD... |
NTLJS3113PTAG | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 3.5A 6-WD... |
NTLJS4149PTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 2.7A 6-WD... |
NTLJD4116NT1G | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 2.5A 6-W... |
NTLJD2105LTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 8V 2.5A 6-W... |
NTLJD3115PTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 2.3A 6-W... |
NTLJD4150PTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 1.8A 6WD... |
NTLJD2104PTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 2.4A 6WD... |
NTLJD2104PTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 2.4A 6WD... |
NTLJD3181PZTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 2.2A 6WD... |
NTLJD3181PZTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 2.2A 6WD... |
NTLJD3183CZTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 6WDFNMo... |
NTLJD3183CZTBG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 6WDFNMo... |
NTLJS4114NT1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 3.6A 6-WD... |
NTLJD3119CTAG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 6WDFNMo... |
NTLJF4156NTAG | ON Semicondu... | 0.09 $ | 3000 | MOSFET N-CH 30V 2.5A 6-WD... |
NTLJS2103PTBG | ON Semicondu... | -- | 3000 | MOSFET P-CH 12V 3.5A 6-WD... |
NTLJF3117PT1G | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 2.3A 6-WD... |
NTLJS3113PT1G | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 3.5A 6-WF... |
NTLJS4114NTAG | ON Semicondu... | 0.18 $ | 1000 | MOSFET N-CH 30V 3.6A 6WDF... |
NTLJD3115PT1G | ON Semicondu... | -- | 50 | MOSFET 2P-CH 20V 2.3A 6-W... |
NTLJD3119CTBG | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V 6WDFNMo... |
NTLJF4156NT1G | ON Semicondu... | -- | 3000 | MOSFET N-CH 30V 2.5A 6-WD... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...