NTLJF3118NTAG

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	6-WDFN Exposed Pad
Supplier Device Package:	6-WDFN (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	700mW (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	271pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	3.7nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	65 mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to NTLJF3118NTAG Application Field and Working PrincipleThe NTLJF3118NTAG is a MosFET (Metal Oxide Semiconductor Field Effect Transistor) single transistor from N T L J F Corporation. It has a maximum working voltage of 60V, a maximum current of 7A and a reduced gate charge for low power consumption switching applications. The NTLJF3118NTAG can be used in various electronic devices such as AC/DC adapters and power supplies, mobile phones, and other high power switching applications.Description of the NTLJF3118NTAGThe NTLJF3118NTAG is a single transistor semiconductor device consisting of a source, a gate, and a drain. The source and drain are both conductive, while the gate is insulated. When voltage is applied to the gate, current can flow through the source and drain, allowing for power switching applications.The NTLJF3118NTAG is designed to have a low gate-charge, which reduces switching power consumption. This is especially beneficial in applications such as mobile phones and AC/DC adapters where low power consumption is required. The low gate charge also allows for higher switching speed, making it suitable for high-speed switching applications.The NTLJF3118NTAG has a wide temperature range, from -40℃ to 150℃. This makes it suitable for applications where wide temperature ranges are required. It also has a robust ESD protection, with an ESD rating of +2kV, making it well suited for applications where electromagnetic disturbances are expected.Working Principle of the NTLJF3118NTAGThe NTLJF3118NTAG works on the principle of a field effect transistor (FET). The transistor is made up of two insulated gates, the source and the drain. When a positive voltage is applied to the gate, electrons are drawn through the source to the drain. This creates a vertical current channel between the source and drain. This channel is the key to the device’s power switching capabilities.When the positive voltage is removed from the gate, the electrons revert back to their original positions. This reduces the current flowing through the source and drain, switching off the device. This is how the NTLJF3118NTAG is able to switch between ‘on’ and ‘off’ states, thereby allowing for power switching applications.Applications of the NTLJF3118NTAGThe NTLJF3118NTAG is a versatile device, with many potential applications. Its low power consumption and high switching speed make it suitable for applications such as AC/DC adapters and power supplies, mobile phones, and other high power switching applications. Its low gate charge and robust ESD protection make it suitable for applications where electromagnetic disturbances are expected, such as automotive and industrial settings.ConclusionThe NTLJF3118NTAG is a single MosFET transistor from NTLJF Corporation. It has a maximum working voltage of 60V, a maximum current of 7A and a reduced gate charge for low power consumption switching applications. It is suitable for various electronic applications such as AC/DC adapters and power supplies, mobile phones, and other electronic devices. It works on the principle of a field effect transistor, with a positive voltage applied to the gate creating a vertical current channel between the source and drain for power switching. The NTLJF3118NTAG is a versatile device, suitable for a range of applications where low power consumption, high switching speed and robust ESD protection are required.

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