Allicdata Part #: | NTLJS3180PZTBG-ND |
Manufacturer Part#: |
NTLJS3180PZTBG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 3.5A 6-WDFN |
More Detail: | P-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6... |
DataSheet: | NTLJS3180PZTBG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19.5nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 16V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-WDFN (2x2) |
Package / Case: | 6-WDFN Exposed Pad |
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NTLJS3180PZTBG is a type of single semiconductor device that is used to amplify weak electrical signals and facilitate their transmission over a physical distance. It is an important component in the buildup of a wide range of circuits and systems, including those required for consumer electronics, aerospace applications, and medical equipment. In this article, we will discuss the application field and working principle of NTLJS3180PZTBG.
NTLJS3180PZTBG is a type of transistor that belongs to the family of field-effect transistors (FETs). It is a FET that has a single gate and is designed to operate in the depletion mode. NTLJS3180PZTBG works by controlling the positive and negative charge carriers that flow through it. When the gate is connected to the ground, the positive and negative charge carriers are prevented from flowing and the device switches off. When the gate is externally supplied with a voltage, the positive and negative charge carriers can flow through and the device switches on.
NTLJS3180PZTBG has a variety of applications in both high-frequency and low-frequency electronics. High-frequency circuits typically rely on NTLJS3180PZTBG to amplify signals in a wide range of frequency ranges, including radio frequency (RF) and audio. Low-frequency circuits, such as those found in computers, can also use NTLJS3180PZTBG to control current and facilitate switching of various parts of the system. Additionally, NTLJS3180PZTBG can also be used in displays to create various lighting effects.
In terms of its working principle, NTLJS3180PZTBG is a type of unipolar transistor. As such, it uses a single type of charge carrier to conduct current. To control the current, an external voltage is applied to the gate of the transistor through a connecting wire. When the voltage applied to the gate is positive, it creates a depletion zone around the channel of the device, which prevents charge carriers from flowing through. By adjusting the voltage applied to the gate, the current through the transistor can be controlled.
Overall, NTLJS3180PZTBG is a type of single semiconductor device that is used to amplify weak electrical signals and facilitate their transmission over a physical distance. It is an important component in the build up of a wide range of circuits and systems. Its application range includes both high-frequency and low-frequency electronics, as well as displays. The working principle of the device is based on the creation of a depletion zone around the channel of the device, which prevents charge carriers from flowing through.
The specific data is subject to PDF, and the above content is for reference
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