NTLJD3115PTAG Allicdata Electronics
Allicdata Part #:

NTLJD3115PTAG-ND

Manufacturer Part#:

NTLJD3115PTAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 2.3A 6-WDFN
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Sur...
DataSheet: NTLJD3115PTAG datasheetNTLJD3115PTAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: NTLJD3115P
Supplier Device Package: 6-WDFN (2x2)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTLJD3115PTAG Application Field and Working Principle

NTLJD3115PTAG is a high-performance, dual-channel power amplifier in the Field Effect Transistor (FET) family. It is characterized by its wide frequency range, low heat dissipation, and high efficiency. The power or output of the amplifier can handle up to 50 watts of power, making it ideal for use in audio equipment, portable media devices, and even automotive applications.

Features:

  • Wide frequency range – 0.1Hz - 20KHz
  • Low heat dissipation – reduced self-heating due to low input capacitance
  • High efficiency – allows devices to be used in applications where power is limited
  • HighLinQ N-Channel technology – increases power output and efficiency by providing higher density of electrons in the channel
  • Advanced thermal protection – stops the FET from operating when temperatures get too high
  • Dual channels – ideal for use in applications where multiple speakers are used

Applications:

NTLJD3115PTAG is a popular choice for use in high-end audio equipment, portable media devices and automotive applications such as car amplifiers and car stereos. It can also be used in other power supply and digital power system applications where high power efficiency is required. It is also suitable for use in base station systems, home theater systems and in high-power digital amplifiers.

Working Principle:

NTLJD3115PTAG utilizes an advanced Field Effect Transistor (FET) technology, known as HighLinQ. This type of FET technology has a unique structure which is engineered to allow electrons to move more freely in the channel. This results in higher efficiency and more power output, as compared to conventional FETs. The NTLJD3115PTAG features a dual channel design, meaning that there are two separate FETs for each channel, allowing for higher power output. The sensitivity of the pins can also be adjusted to reduce power dissipation and improve efficiency.

The NTLJD3115PTAG also features an advanced thermal protection system. This system automatically shuts off the FET if temperatures get too high, helping to prevent damage and ensure longevity. Finally, the FET is designed with a low input capacitance, which helps to reduce self-heating and improve efficiency. All of these features combine to make the NTLJD3115PTAG suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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