NTLJS1102PTAG

The NTLJS1102PTAG is a low capacitance silicon-based surface-mount plastic dual-gate MOSFET. It integrates a vertical structure MOSFET and has advantages such as wide range of control voltage and high speed. This article will discuss application fields and working principle of the NTLJS1102PTAG.

The NTLJS1102PTAG is suitable for various high-speed switching applications, such as video switching, switching power supplies and automotive switch applications. It is also suitable for digital circuits requiring a low turn-on and turn-off time. Due to its low capacitance and low on-state resistance, it can also be used in broadband amplifiers, RF switches, microwave components and high-speed logic circuits.

The NTLJS1102PTAG is a vertical structure MOSFET that consists of two P-type and two N-channel MOSFETs, each with its own gates. The drain-source current flow of the two N-channel MOSFETs can be individually controlled by the gate voltage of one of the P-type MOSFETs. When the gate voltage of the P-type MOSFET is low, the N-channel MOSFETs are turned off, while when the gate voltage of the P-type MOSFET is high, both N-channel MOSFETs are turned on. This allows the N-channel MOSFETs to be switched on and off separately, and in parallel for better power distribution.

The NTLJS1102PTAG also has an asymmetrical structure which allows it to have two different threshold voltages. The higher threshold voltage can provide better protection from ESD and over voltage, while the lower threshold voltage provides more flexibility in controlling the turn-on and turn-off times.

The NTLJS1102PTAG is a versatile low capacitance silicon-based surface-mount plastic dual-gate MOSFET. It is suitable for various high-speed switching applications, such as video switching, switching power supplies and automotive switch applications. It also has a wide range of control voltage and high speed due to its asymmetrical structure and low on-state resistance.