NTLJF3118NTBG

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The NTLJF3118NTBG is a high frequency, low gate charge and low on-state resistance smart piggyback MOSFET, meaning that it is a type of transistor that combines two FETs into a single package and connects them in parallel to improve performance.

This type of device is ideal for high frequency applications where the gate charge requirements are low and on-state resistance must be managed carefully. It offers up to three times the power dissipation capacity of a single MOSFET, as well as improved switching speeds.

The NTLJF3118NTBG is a 60V N-Channel MOSFET that is available in both a TO-252 and DPAK Lead-Free package. It has an RDS (On) of 21mA and a maximum gate charge of 5.6nC. The maximum drain current is 98A, and the maximum drain-source voltage (VDSS) is 60V.

The working principle of the NTLJF3118NTBG is similar to that of any MOSFET. It is an insulated gate field effect transistor (IGFET), meaning that it consists of three terminals – source, drain, and gate. In order for current to flow through the device, a voltage must be applied to the gate relative to the source. This voltage acts as an electric field that causes the transistor to “open” and allow current to flow from the source to the drain.

In the NTLJF3118NTBG, a smart piggyback MOSFET is used which consists of two FETs in a single package. It improves switching performance by utilizing both transistors in parallel and allowing current to flow in either direction. This offers power dissipation capacity up to three times that of a single device, as well as improved efficiency and reliability in high frequency applications.

The NTLJF3118NTBG MOSFET is suitable for a wide range of applications including DC/DC conversion, inverter, AC/DC power supplies, and motor control. It is also suitable for lighting and solar inverter applications.

In summary, the NTLJF3118NTBG is a high frequency, low gate charge and low on-state resistance smart piggyback MOSFET that is suitable for a variety of applications including DC/DC conversion, inverter, AC/DC power supplies, and motor control. It offers up to three times the power dissipation capacity of a single device, as well as improved efficiency and reliability in high frequency applications.

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