NTLJS4114NTAG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTLJS4114NTAG is a single MOSFET suitable for a variety of applications in modern electronics. It is a four-terminal field effect transistor (FET) allowing the device to be operated in both source-side and drain-side operation. The NTLJS4114NTAGis well-suited for a wide range of uses, including low-power RF applications, power switching, and low-noise pulsed circuits.

The NTLJS4114NTAG utilizes vertical double-diffused MOS (VDMOS) technology which provides high output voltage, low on-resistance, and high speed. The device is capable of delivering low noise performance, fitting high-density applications, and switching between high current and low current states quickly. Additionally, this MOSFET features point contact technology which reduces power consumption.

The NTLJS4114NTAG is also capable of providing protection against voltage spikes and ESD with its integrated reverse drain-source (RDS) diode. The device features an integrated gate-source protection diode, as well as a temperature-independent breakdown voltage. The maximum operating temperature is + 125°C.

At the heart of the NTLJS4114NTAG lies a 2D-GaN-on-Si MOSFET, designed for low on-resistance. This allows the MOSFET to achieve superior switching performance with low conduction losses and fast switching speed. Additionally, the NTLJS4114NTAG offers a wide gate-source range and low gate-source threshold voltage which contributes to its low power consumption.

The NTLJS4114NTAG is commonly used in DC-DC conversion applications. It is placed in between two DC power sources and acts as a switch that can be turned on and off to control the flow of the current. This allows the voltage between the two sources to be regulated. It can also be used in low-noise pulsed circuits because of its low on-resistance, fast switching speed, high current density and low gate charge, which minimizes the switching noise.

The NTLJS4114NTAG is also used in power switching. It can be used as a low-noise switch for high-power applications, allowing it to be switched on or off as needed. Additionally, as mentioned earlier, this device features an integrated gate-source protection diode, which provides protection against ESD and current overshoots. The NTLJS4114NTAG is also suitable for RF applications due to its low noise performance and fast switching speed.

In summary, the NTLJS4114NTAG is a powerful and versatile MOSFET suitable for a wide range of applications, including DC-DC conversion, power switching, low-noise pulsed circuits, and RF applications. Featuring an integrated diode and advanced MOSFET technology, this device is capable of delivering low power consumption and high-speed performance. The NTLJS4114NTAG is a robust and reliable FET, providing protection against voltage spikes and ESD and a wide operational temperature range.

The specific data is subject to PDF, and the above content is for reference