Allicdata Part #: | NTLJS2103PTAG-ND |
Manufacturer Part#: |
NTLJS2103PTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 3.5A 6-WDFN |
More Detail: | P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6... |
DataSheet: | NTLJS2103PTAG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WDFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1157pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTLJS2103PTAG is a single-channel MOSFET (metal oxide semiconductor field-effect transistor) based on a field-effect amplifier circuit. It is designed to provide an improved on-state current and a better off-state leakage current than bipolar transistors.N-channel MOSFET transistors are used for Power Applications such as motor control and power conversion. They can be combined with other types of transistors such as P-channel MOSFETs or Bipolar Junction Transistors (BJT) to form even more complex circuits.
The NTLJS2103PTAG is constructed with a self-aligned, implant diffused poly-silicon gate over a highly-doped source and drain regions. The gate is insulated from the source and drain regions by a thin gate oxide layer. An ohmic contact is provided on the gate. This contact allows the user to control the voltage and current to the source and drain. When the gate is biased at a certain voltage, a thin depletion layer forms at the gate-oxide interface and modulates the current between the source and the drain.
The working principle of the NTLJS2103PTAG is based on the field-effect principle that describes the behavior of a MOSFET. When the gate voltage is below the threshold voltage (V th ), the current between the source and the drain, known as the drain current (I D ), is low. When the gate voltage is increased above the threshold voltage, the drain current increases exponentially. This characteristic makes the NTLJS2103PTAG an ideal device for power applications as it can easily control a large amount of current with a low control voltage.
The NTLJS2103PTAG can be used in many different applications. It can be used as a variable gain amplifier or a variable current source. It can also be used in various switch and gate driver circuits. The device is also ideal for power conversion applications, such as motor control and power amplifiers. With its low input capacitance and fast switching speed, the NTLJS2103PTAG is also suited for video signal processing applications.
The NTLJS2103PTAG is a single-channel MOSFET with an on-state current rating of up to 300mA. It is available in a 4-pin TO-220 package and is rated for a voltage of -40V. The NTLJS2103PTAG offers excellent performance even at high temperature and is designed to withstand temperatures up to 175°C. The NTLJS2103PTAG can be used in variety of applications and is well suited for power applications such as motor control, voltage regulators, and power conversion.
The specific data is subject to PDF, and the above content is for reference
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