NTLJS3180PZTAG Allicdata Electronics
Allicdata Part #:

NTLJS3180PZTAG-ND

Manufacturer Part#:

NTLJS3180PZTAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 3.5A 6-WDFN
More Detail: P-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6...
DataSheet: NTLJS3180PZTAG datasheetNTLJS3180PZTAG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-WDFN (2x2)
Package / Case: 6-WDFN Exposed Pad
Description

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The NTLJS3180PZTAG is a single N-channel enhancement mode power field effect transistor (FET) designed specifically for use in applications such as DC-DC converters and surface mount switching regulators.

This FET has been designed using advanced CMOS technology, providing superior RDS(on) compared to other FETs in its category. It also features a built-in over-temperature protection and ESD protection, making it a very robust and reliable switching FET for a wide range of circuits.

The NTLJS3180PZTAG can be used in switching circuits, motor control, and power management applications, and is suitable for operating from a single power supply. The high drain-to-source breakdown voltage and low RDS(on) of this device makes it an excellent choice for high current applications.

The NTLJS3180PZTAG is a enhancement-mode FET, which means that it does not require an external gate bias to turn it on. Instead, when the gate voltage is greater than the source voltage, the FET will turn on and allow current to flow between the source and drain.

This makes the NTLJS3180PZTAG a great choice for low-cost applications that require switching control, since it does not require an additional power supply to switch the device on and off. When the gate voltage is less than the source voltage, the FET is turned off and allows no current to flow between the source and drain.

The NTLJS3180PZTAG is also well suited for high frequency applications, as its gate charging is fast enough to prevent the device from being damaged during switching. The gate capacitance of this FET is very low, resulting in low power dissipation and improved efficiency in high frequency applications.

In conclusion, the NTLJS3180PZTAG is an excellent choice for switching applications that require minimal external circuitry and a robust solution for high current applications. It is easy to use with its built-in over-temperature and ESD protection, and between its low RDS(on) and fast gate charging time this FET provides superior performance for a wide range of circuits.

The specific data is subject to PDF, and the above content is for reference

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