NTLJS3113PTAG

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The NTLS3113PTAG is a single-gated P-type metal-oxide semiconductor field-effect transistor (MOSFET) commonly used in the manufacture of integrated circuits. It is one of the most versatile power transistors available, providing efficient switching, low on-state resistance, and low gate-source capacitance.

The NTLS3113PTAG is a high-voltage MOSFET that features a drain-source voltage (VDS) up to 30V, a drain current of up to 1.2A, and a maximum gate-source voltage (VGS) of 20V. It is a P-channel device, meaning that it has four contacts: drain, gate, source, and body. It primarily works as a voltage-controlled switch, meaning that an input voltage is used to control the gate of the transistor, which in turn switches the drain-source current.

The NTLS3113PTAG can be used as a power switch for DC-DC converters in various applications, such as laptop power supplies, notebook power supplies, DC power supplies, and various other consumer electronics. It can also be used as a switch in MOSFET relay circuits and as a switch for high-side switching applications. It is popular for use in automotive applications and for powering consumer electronics.

The NTLS3113PTAG can also be used in logic gates, as a voltage regulator, and as a switch in many electronic circuits. It is rated for a junction temperature of up to 150°C, making it suitable for high-temperature environments.

The working principle of the NTLS3113PTAG is based on the fact that, when it is exposed to a gate voltage, it produces a variable electric field at the gate-source junction. This electric field allows mobile carriers, mostly holes, to move into the channel near the gate. The number of carriers moving through the channel is affected by the applied gate voltage, and this in turn affects the flow of current through the channel.

When the applied gate voltage is increased, the electric field at the gate-source junction increases and causes more carriers to enter the channel. This increases the drain-source current, which causes the MOSFET to enter the on-state or saturation region. In this region, the drain-source current is proportional to the gate voltage and the voltage drop across the source and drain is minimized, making it an efficient way to switch high power loads.

When the applied gate voltage is decreased, this electric field is reduced and fewer carriers enter the channel. This decreases the drain-source current, which causes the MOSFET to enter the off-state. In this region, the drain-source current is reduced and the voltage drop across the source and drain is maximized, effectively shutting off the switched load.

In summary, the NTLS3113PTAG is a single-gated, p-type metal-oxide semiconductor field-effect transistor commonly used in the manufacture of integrated circuits. It provides efficient switching and low on-state resistance, enabling it to be used in many high-power applications, such as laptop and notebook power supplies, DC power supplies, and automotive applications, as well as in logic gates, voltage regulators, and other circuits. Its working principle is based on producing a variable electric field at the gate-source junction, which affects the number of carriers entering the channel and controls the drain-source current to either enter the on-state or off-state.

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