NTLJD3119CTAG

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	NTLJD3119C
Supplier Device Package:	6-WDFN (2x2)
Package / Case:	6-WDFN Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	710mW
Input Capacitance (Ciss) (Max) @ Vds:	271pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:	3.7nC @ 4.5V
Series:	µCool™
Rds On (Max) @ Id, Vgs:	65 mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.6A, 2.3A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	N and P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The topic of this article is the NTLJD3119CTAG application field and its working principle. This type of transistor is a kind of Field Effect Transistor (FET) that belongs to the MOSFET (Metal-Oxide Semiconductor FET) family. FET’s are especially useful in applications where the requirements for speed and efficiency are very high, as well as in applications where high input impedances are required. The NTLJD3119CTAG is an array of FETs that includes a total of 16 transistors in one IC.

Application Field

This transistor array is mainly used as a switching element and is often employed in power electronics applications. For example, it is suitable for applications such as motor-drive, motor-speed control, and power switching, where high-power switching capability, along with high efficiency and high speed is desired. Furthermore, it is also suitable for low-speed switching applications, such as LED control and oscillator circuit configurations. Moreover, they have been used in lighting control, digital isolators, and voltage-controlled charging applications.

Working Principle

The working principle of this device involves a number of components, namely gate capacitance (Cgs), gate-drain capacitance (Cgd), body capacitance (Cmb), drain-source capacitance (Cds), and lead inductance (Ls). All these components play their own, independent part in the working of the device. The NTLJD3119CTAG includes four dual P-channel and four dual N-channel MOSFETs, and is therefore capable of performing dual-direction switching. The P-channel MOSFETs can be used for controlling the high-side voltage, while the N-channel MOSFETs can be used for controlling the low-side voltage. The dual MOSFETs are comprised of two transistors, one source and one drain, each one with its own control gate, which enables them to control both the positive and negative sides of the device. The NTLJD3119CTAG also has a very high gain (up to 1,000), which makes it suitable for a wide range of applications.The gate capacitance (Cgs)of the NTLJD3119CTAG is quite low (1 pF) which provides an excellent level of control over the switching of the transistors. Moreover, it has a low gate-drain capacitance (Cgd) of 0.1 pF, and a low body capacitance (Cmb) of 0.1 pF. In addition, it has a very low drain-source capacitance (Cds) of 0.1 pF, and a lead inductance (Ls) of 0.1 nH. This low lead inductance is beneficial, because it allows the FETs to achieve a higher speed of switching.

Conclusion

The NTLJD3119CTAG is a very useful type of FET, mostly due to its high efficiency, high speed, and low gate capacitance. It is ideal for a wide range of applications, including motor-drive and motor-speed control, power switching, LED control, oscillator circuits, and voltage-controlled charging. Thanks to its low gate capacitance and lead inductance, as well as its dual-direction switching ability, the NTLJD3119CTAG can be used for very efficient and fast switching.

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