NTLJD3183CZTBG Allicdata Electronics
Allicdata Part #:

NTLJD3183CZTBG-ND

Manufacturer Part#:

NTLJD3183CZTBG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 20V 6WDFN
More Detail: Mosfet Array N and P-Channel 20V 2.6A, 2.2A 710mW ...
DataSheet: NTLJD3183CZTBG datasheetNTLJD3183CZTBG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
Series: --
Description

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The NTLJD3183CZTBG application field and working principle is a comprehensive understanding of the characteristics of the NTLJD3183CZTBG, an array transistor. This kind of transistor is a 7-in-1 device containing an interconnected array of four N-channel and three P-channel MOSFETs. It is an ideal choice for a wide range of applications in which cost and space is a concern.

The NTLJD3183CZTBG array transistor corresponds to a discrete system containing four and three MOSFETs, connected in series. This system is designed to reduce the space and cost taken up by separate discrete devices and is highly advantageous in cost-conscious applications. As this array was created to reduce the number of discrete devices it contains, it is able to reduce the system size and cost significantly while reducing the power dissipation to an impressive minimum.

The NTLJD3183CZTBG array transistor is used in various applications that require a certain level of power control, such as motor control, data acquisition, and power management. This kind of transistor is used for a wide range of different applications, from consumer electronics and LED lighting to industrial and automotive applications. Its unique feature is its high efficiency of operation, making it a more cost-effective alternative to other power controlling solutions.

The NTLJD3183CZTBG array transistor operates on the principle of switching power from high voltage to low voltage, following the inherent characteristics of the MOSFETs comprising the array. When the input voltage of the device is higher than the threshold voltage, the MOSFETs in the array will be turned on or off, allowing or blocking the flow of current. This facilitates greater power control and can allow for efficient current switching in applications such as motor control.

The NTLJD3183CZTBG array transistor is designed to provide high voltage protection and control of multiple power devices while reducing power consumption. The device combines the inherent switching characteristics of the MOSFETs it consists of, ensuring efficient and reliable power control. This makes it an ideal choice for applications where efficient power switching and economization of space and cost are important.

In conclusion, the NTLJD3183CZTBG array transistor is a highly efficient device that allows for a cost-effective and space-saving solution for various power control related applications. Its array of four N-channel and three P-channel MOSFETs provides great switching and control capability, even with very low power dissipation. This makes the device a great option for applications where controlling power costs, space and efficiency are a priority.

The specific data is subject to PDF, and the above content is for reference

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