Allicdata Part #: | NTLJS4149PTAG-ND |
Manufacturer Part#: |
NTLJS4149PTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 2.7A 6-WDFN |
More Detail: | P-Channel 30V 2.7A (Ta) 700mW (Ta) Surface Mount 6... |
DataSheet: | NTLJS4149PTAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WDFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTLJS4149PTAG is a type of Field-Effect Transistor (FET). These transistors are commonly used in electronic circuits to increase the resistance of a load and control the voltage of an electronic signal. In particular, the NTLJS4149PTAG is an enhancement-mode and double-transistor type FET, specifically designed for low-voltage, high-reliability electronic power applications.
These types of transistors are also known as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). MOSFETs are ideal for low-power switching and voltage regulation applications. The NTLJS4149PTAG is a single-gate MOSFET, which means it is a three-terminal device with one control gate that is used to regulate the flow of current. It features a high-performance, low voltage gate (Vgs) and very low parasitic capacitances in both source and drain for superior switching characteristics.
This makes it an excellent choice for low-voltage applications, especially for RF microwave circuits, such as power amplifiers. By controlling the voltage applied to the gate, the NTLJS4149PTAG can be used to amplify signals or reduce the current output, depending on the application. Thanks to its low voltage gate and minimal parasitics, it has excellent matched impedances and wide frequency response, making it ideal for RF power switching applications. This type of FET is also very fast compared to other types, so it is well suited for pulse-width-modulated (PWM) switching circuit applications.
The NTLJS4149PTAG is an especially useful device for high-frequency applications up to 5GHz, due to its minimal on-resistance (RON) and low gate charge (Qgs). These features, combined with its low drain-source on-state resistance make it both cost-effective and energy-efficient choice. The low input/output impedance and low switching times also mean it can handle high-frequency applications without suffering from signal quality degradation.
This FET can be used in a variety of applications, ranging from RF power switching to linear regulation and pulse-width modulation. It is commonly used in the automotive, consumer, and industrial sectors. From automotive systems such as engine control, ABS brakes, and fuel injection, to consumer electronics like DVD players and satellite TV set-top boxes, the NTLJS4149PTAG is a versatile and dependable device for low-voltage, high-frequency operation.
The specific data is subject to PDF, and the above content is for reference
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